Nonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layers

S. M. Wang, Chi Wah Leung, P. K.L. Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

38 Citations (Scopus)

Abstract

We demonstrate the modification of the memory effect in organic memory devices by adjusting the thickness of silver nanoparticles (NPs) layer embedded into the organic semiconductor. The memory window widens with increasing Ag NPs layer thickness, a maximum window of 90 V is achieved for 5 nm Ag NPs and the on/off current ratio decreases from 105to 10 when the Ag NPs layer thickness increases from 1 to 10 nm. We also compare the charge retention properties of the devices with different Ag NPs thicknesses. Our investigation presents a direct approach to optimize the performance of organic memory with the current structure.
Original languageEnglish
Article number023511
JournalApplied Physics Letters
Volume97
Issue number2
DOIs
Publication statusPublished - 12 Jul 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this