Nonvolatile multilevel memory effect by resistive switching in manganite thin films

H. K. Lau, Chi Wah Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

27 Citations (Scopus)


A planar multilevel memory structure is proposed and examined based on the resistive switching phenomenon in La0.7Sr0.3MnO3 films with gold electrodes. Through the application of specific voltage pulses, such structures can be driven to well-defined intermediate resistance values. Samples were subjected to repeated switching cycles and prolonged reading processes to examine their durability during operations. Prescribed states of the samples could be retained after 10 000 switching cycles, and such states remained stable upon continuous probing. The proposed structure provides a simple scheme for the implementation of compact and nonvolatile multibit memory devices.
Original languageEnglish
Article number123705
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 1 Dec 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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