Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating

Qingqing Dou; Junyao Mo; Beibei Xu; Nan Gong; Tao Man; Zicheng Li; Gongxun Bai; Chonggen Ma; Jianrong Qiu; Jianhua Hao

doi:10.1364/OL.451697

Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating

Qingqing Dou, Junyao Mo, Beibei Xu, Nan Gong, Tao Man, Zicheng Li, Gongxun Bai, Chonggen Ma, Jianrong Qiu, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2- at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O-, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.

Original language	English
Pages (from-to)	1578-1581
Number of pages	4
Journal	Optics Letters
Volume	47
Issue number	7
DOIs	https://doi.org/10.1364/OL.451697
Publication status	Published - 1 Apr 2022

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OL.451697

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@article{9b81ea84892e42fb835b80a5215003fa,

title = "Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating",

abstract = "Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2- at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O-, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.",

author = "Qingqing Dou and Junyao Mo and Beibei Xu and Nan Gong and Tao Man and Zicheng Li and Gongxun Bai and Chonggen Ma and Jianrong Qiu and Jianhua Hao",

note = "Funding Information: Funding. National Natural Science Foundation of China (62005240); Fundamental Research Funds for the Central Universities; the Open Fund of the State Key Laboratory of Modern Optical Instrumentation of Zhejiang University; Zhejiang University K.P. Chao{\textquoteright}s High Technology Development Foundation. Publisher Copyright: {\textcopyright} 2022 Optica Publishing Group.",

year = "2022",

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doi = "10.1364/OL.451697",

language = "English",

volume = "47",

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TY - JOUR

T1 - Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating

AU - Dou, Qingqing

AU - Mo, Junyao

AU - Xu, Beibei

AU - Gong, Nan

AU - Man, Tao

AU - Li, Zicheng

AU - Bai, Gongxun

AU - Ma, Chonggen

AU - Qiu, Jianrong

AU - Hao, Jianhua

N1 - Funding Information: Funding. National Natural Science Foundation of China (62005240); Fundamental Research Funds for the Central Universities; the Open Fund of the State Key Laboratory of Modern Optical Instrumentation of Zhejiang University; Zhejiang University K.P. Chao’s High Technology Development Foundation. Publisher Copyright: © 2022 Optica Publishing Group.

PY - 2022/4/1

Y1 - 2022/4/1

N2 - Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2- at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O-, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.

AB - Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2- at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O-, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.

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DO - 10.1364/OL.451697

M3 - Journal article

C2 - 35363682

AN - SCOPUS:85127422362

SN - 0146-9592

VL - 47

SP - 1578

EP - 1581

JO - Optics Letters

JF - Optics Letters

IS - 7

ER -

Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating

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