Abstract
Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(N-vinylcarbazole) (PVK)-graphene composites, are fabricated. The current density-voltage characteristics of the fabricated device show different electrical conductance behaviors, such as insulator behavior, write-once read-many-times (WORM) memory effect, rewritable memory effect and conductor behavior, which depend on the content of graphene in the PVK-graphene composites. The OFF and ON states of the WORM and rewritable memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of -1.0 V. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices.
Original language | English |
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Pages (from-to) | 1289-1295 |
Number of pages | 7 |
Journal | Organic Electronics: physics, materials, applications |
Volume | 13 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1 Aug 2012 |
Keywords
- Conductance tuning
- Graphene
- Memory devices
- Poly(N-vinylcarbazole)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering