Nonvolatile memory devices based on electrical conductance tuning in poly(N-vinylcarbazole)-graphene composites

Qiang Zhang, Jie Pan, Xiang Yi, Liang Li, Songmin Shang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

64 Citations (Scopus)

Abstract

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(N-vinylcarbazole) (PVK)-graphene composites, are fabricated. The current density-voltage characteristics of the fabricated device show different electrical conductance behaviors, such as insulator behavior, write-once read-many-times (WORM) memory effect, rewritable memory effect and conductor behavior, which depend on the content of graphene in the PVK-graphene composites. The OFF and ON states of the WORM and rewritable memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of -1.0 V. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices.
Original languageEnglish
Pages (from-to)1289-1295
Number of pages7
JournalOrganic Electronics: physics, materials, applications
Volume13
Issue number8
DOIs
Publication statusPublished - 1 Aug 2012

Keywords

  • Conductance tuning
  • Graphene
  • Memory devices
  • Poly(N-vinylcarbazole)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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