Nonvolatile Control of the Electronic Properties of In2- xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge

Meng Xu, Jian Min Yan, Lei Guo, Hui Wang, Zhi Xue Xu, Ming Yuan Yan, Yun Long Lu, Guan Yin Gao, Xiao Guang Li, Hao Su Luo, Yang Chai, Ren Kui Zheng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)


A series of Cr-doped In2-xCrxO3 (ICO) semiconductor thin films were epitaxially grown on (111)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29PT) single-crystal substrates by the pulsed laser deposition. Upon the application of an electric field to the PMN-0.29PT substrate along the thickness direction, we realized in situ, reversible, and nonvolatile control of the electronic properties and Fermi level of the films, which are manifested by abundant physical phenomena such as the n-type to p-type transformation, metal-semiconductor transition, metal-insulator transition, crossover of the magnetoresistance (MR) from negative to positive, and a large nonvolatile on-and-off ratio of 5.5 × 104% at room temperature. We also strictly disclose that both the sign and the magnitude of MR are determined by the electron carrier density of ICO films, which could modify the s-d exchange interaction and weak localization effect. Our results demonstrate that the ferroelectric gating approach using PMN-PT can be utilized to gain deeper insight into the carrier-density-related electronic properties of In2O3-based semiconductors and provide a simple and energy efficient way to construct multifunctional devices which can utilize the unique properties of composite materials.

Original languageEnglish
Pages (from-to)32449-32459
Number of pages11
JournalACS Applied Materials and Interfaces
Issue number35
Publication statusPublished - 4 Sept 2019


  • electronic properties
  • ferroelectric field effect
  • ferroelectric single crystal
  • magnetoresistance
  • wide-band-gap oxide semiconductors films

ASJC Scopus subject areas

  • General Materials Science


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