Nonlithographic fabrication of crystalline silicon nanodots on graphene

Guo'An Tai, Kai Wang, Zhenhua Sun, Jun Yin, Sheung Mei Ng, Jianxin Zhou, Feng Yan, Chi Wah Leung, Kin Hung Wong, Wanlin Guo, Shu Ping Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

12 Citations (Scopus)


We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 °C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.
Original languageEnglish
Pages (from-to)532-537
Number of pages6
JournalJournal of Physical Chemistry C
Issue number1
Publication statusPublished - 12 Jan 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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