Nonlithographic fabrication of crystalline silicon nanodots on graphene

Guo'An Tai; Kai Wang; Zhenhua Sun; Jun Yin; Sheung Mei Ng; Jianxin Zhou; Feng Yan; Chi Wah Leung; Kin Hung Wong; Wanlin Guo; Shu Ping Lau

doi:10.1021/jp210713q

Nonlithographic fabrication of crystalline silicon nanodots on graphene

Guo'An Tai, Kai Wang, Zhenhua Sun, Jun Yin, Sheung Mei Ng, Jianxin Zhou, Feng Yan, Chi Wah Leung, Kin Hung Wong, Wanlin Guo, Shu Ping Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

12 Citations (Scopus)

Abstract

We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 °C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.

Original language	English
Pages (from-to)	532-537
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	116
Issue number	1
DOIs	https://doi.org/10.1021/jp210713q
Publication status	Published - 12 Jan 2012

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

More information

10.1021/jp210713q

Cite this

@article{22c9e987150b46ee8f86119ad5aede18,

title = "Nonlithographic fabrication of crystalline silicon nanodots on graphene",

abstract = "We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 °C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.",

author = "Guo'An Tai and Kai Wang and Zhenhua Sun and Jun Yin and Ng, {Sheung Mei} and Jianxin Zhou and Feng Yan and Leung, {Chi Wah} and Wong, {Kin Hung} and Wanlin Guo and Lau, {Shu Ping}",

year = "2012",

month = jan,

day = "12",

doi = "10.1021/jp210713q",

language = "English",

volume = "116",

pages = "532--537",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "1",

}

TY - JOUR

T1 - Nonlithographic fabrication of crystalline silicon nanodots on graphene

AU - Tai, Guo'An

AU - Wang, Kai

AU - Sun, Zhenhua

AU - Yin, Jun

AU - Ng, Sheung Mei

AU - Zhou, Jianxin

AU - Yan, Feng

AU - Leung, Chi Wah

AU - Wong, Kin Hung

AU - Guo, Wanlin

AU - Lau, Shu Ping

PY - 2012/1/12

Y1 - 2012/1/12

N2 - We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 °C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.

AB - We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 °C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84862942878&partnerID=8YFLogxK

U2 - 10.1021/jp210713q

DO - 10.1021/jp210713q

M3 - Journal article

SN - 1932-7447

VL - 116

SP - 532

EP - 537

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 1

ER -

Nonlithographic fabrication of crystalline silicon nanodots on graphene

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this