Abstract
We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 °C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.
Original language | English |
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Pages (from-to) | 532-537 |
Number of pages | 6 |
Journal | Journal of Physical Chemistry C |
Volume | 116 |
Issue number | 1 |
DOIs | |
Publication status | Published - 12 Jan 2012 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Energy
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films