Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films

X. L. Wang; Q. Shao; Chi Wah Leung; A. Ruotolo

doi:10.1063/1.4793639

Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films

X. L. Wang, Q. Shao, Chi Wah Leung, A. Ruotolo

Research output: Journal article publication › Journal article › Academic research › peer-review

29 Citations (Scopus)

Abstract

We report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies.

Original language	English
Article number	17C301
Journal	Journal of Applied Physics
Volume	113
Issue number	17
DOIs	https://doi.org/10.1063/1.4793639
Publication status	Published - 7 May 2013

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4793639

http://hdl.handle.net/10397/5897

Cite this

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abstract = "We report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies.",

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AB - We report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies.

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Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films

Abstract

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