Non-volatile, electric control of magnetism in Mn-substituted ZnO

X. L. Wang; Q. Shao; Chi Wah Leung; R. Lortz; A. Ruotolo

doi:10.1063/1.4865428

Non-volatile, electric control of magnetism in Mn-substituted ZnO

X. L. Wang, Q. Shao, Chi Wah Leung, R. Lortz, A. Ruotolo

Research output: Journal article publication › Journal article › Academic research › peer-review

36 Citations (Scopus)

Abstract

We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandwiched between two metallic electrodes. The bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment. The scalability of the system was investigated by fabricating devices with lateral size down to 400nm.

Original language	English
Article number	062409
Journal	Applied Physics Letters
Volume	104
Issue number	6
DOIs	https://doi.org/10.1063/1.4865428
Publication status	Published - 2 Oct 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.4865428

http://hdl.handle.net/10397/22935

Cite this

@article{144dc2b6bf1f46be9820285df8b80c9a,

title = "Non-volatile, electric control of magnetism in Mn-substituted ZnO",

abstract = "We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandwiched between two metallic electrodes. The bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment. The scalability of the system was investigated by fabricating devices with lateral size down to 400nm.",

author = "Wang, {X. L.} and Q. Shao and Leung, {Chi Wah} and R. Lortz and A. Ruotolo",

year = "2014",

month = oct,

day = "2",

doi = "10.1063/1.4865428",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Non-volatile, electric control of magnetism in Mn-substituted ZnO

AU - Wang, X. L.

AU - Shao, Q.

AU - Leung, Chi Wah

AU - Lortz, R.

AU - Ruotolo, A.

PY - 2014/10/2

Y1 - 2014/10/2

N2 - We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandwiched between two metallic electrodes. The bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment. The scalability of the system was investigated by fabricating devices with lateral size down to 400nm.

AB - We show that the magnetic properties of a dilute semiconductor oxide can be altered in a reversible and non-volatile manner by the application of an electric field. The selected ferromagnetic oxide was manganese-substituted zinc oxide. Bipolar resistive memory switching was induced in the film sandwiched between two metallic electrodes. The bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment. The scalability of the system was investigated by fabricating devices with lateral size down to 400nm.

UR - http://www.scopus.com/inward/record.url?scp=84902470591&partnerID=8YFLogxK

U2 - 10.1063/1.4865428

DO - 10.1063/1.4865428

M3 - Journal article

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062409

ER -

Non-volatile, electric control of magnetism in Mn-substituted ZnO

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this