Non-destructive, non-contact characterization of silicon using photothermal radiometry

T. M. Hiller, Michael Geoffrey Somekh, S. J. Sheard, D. R. Newcombe

Research output: Journal article publicationJournal articleAcademic researchpeer-review

11 Citations (Scopus)


Non-destructive characterization of silicon at some depth within a wafer is a difficult task, but is necessary for any realistic on-line process monitoring for large semiconductor devices. The techniques that appear most promising at the moment rely on the detection of optically injected carriers by either a Schottky contact or the attenuation of a probe laser by the carriers. Photothermal methods have also recently been used for semiconductor evaluation, and this paper presents a development of the photothermal technique that enables non-contact, non-destructive evaluation of carrier lifetime in a silicon sample.
Original languageEnglish
Pages (from-to)107-111
Number of pages5
JournalMaterials Science and Engineering B
Issue number2
Publication statusPublished - 1 Jan 1990
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Non-destructive, non-contact characterization of silicon using photothermal radiometry'. Together they form a unique fingerprint.

Cite this