Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier

Wei Jin; Weidong Liu; Chaohe Hai; Philip Ching Ho Chan; Chenming Hu

doi:10.1109/16.915730

Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier

Wei Jin, Weidong Liu, Chaohe Hai, Philip Ching Ho Chan, Chenming Hu

Research output: Journal article publication › Journal article › Academic research › peer-review

7 Citations (Scopus)

Abstract

SOI technology is a promising candidate for radio-frequency and microwave applications. In this work, SOI low-noise amplifiers (LNA) operating at 1.8-GHz under 1.5-V power supply are reported for the first time and the high-frequency noise characteristics are studied. A physical SOI thermal noise model is applied, and all the major noise sources associated with the transistors are modeled. SPICE simulation results of the circuit noise agree well with the measurement data. LNA composed of floating-body SOI devices offers better performance than that with body-tied devices.

Original language	English
Pages (from-to)	803-809
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	4
DOIs	https://doi.org/10.1109/16.915730
Publication status	Published - 1 Apr 2001
Externally published	Yes

Keywords

Induced gate noise
Low-noise amplifier (LNA)
SOI MOSFET
Thermal noise

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.915730

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title = "Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier",

abstract = "SOI technology is a promising candidate for radio-frequency and microwave applications. In this work, SOI low-noise amplifiers (LNA) operating at 1.8-GHz under 1.5-V power supply are reported for the first time and the high-frequency noise characteristics are studied. A physical SOI thermal noise model is applied, and all the major noise sources associated with the transistors are modeled. SPICE simulation results of the circuit noise agree well with the measurement data. LNA composed of floating-body SOI devices offers better performance than that with body-tied devices.",

keywords = "Induced gate noise, Low-noise amplifier (LNA), SOI MOSFET, Thermal noise",

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AU - Jin, Wei

AU - Liu, Weidong

AU - Hai, Chaohe

AU - Chan, Philip Ching Ho

AU - Hu, Chenming

PY - 2001/4/1

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AB - SOI technology is a promising candidate for radio-frequency and microwave applications. In this work, SOI low-noise amplifiers (LNA) operating at 1.8-GHz under 1.5-V power supply are reported for the first time and the high-frequency noise characteristics are studied. A physical SOI thermal noise model is applied, and all the major noise sources associated with the transistors are modeled. SPICE simulation results of the circuit noise agree well with the measurement data. LNA composed of floating-body SOI devices offers better performance than that with body-tied devices.

KW - Induced gate noise

KW - Low-noise amplifier (LNA)

KW - SOI MOSFET

KW - Thermal noise

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Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier

Abstract

Keywords

ASJC Scopus subject areas

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