SOI technology is a promising candidate for radio-frequency and microwave applications. In this work, SOI low-noise amplifiers (LNA) operating at 1.8-GHz under 1.5-V power supply are reported for the first time and the high-frequency noise characteristics are studied. A physical SOI thermal noise model is applied, and all the major noise sources associated with the transistors are modeled. SPICE simulation results of the circuit noise agree well with the measurement data. LNA composed of floating-body SOI devices offers better performance than that with body-tied devices.
- Induced gate noise
- Low-noise amplifier (LNA)
- SOI MOSFET
- Thermal noise
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering