Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier

Wei Jin, Weidong Liu, Chaohe Hai, Philip Ching Ho Chan, Chenming Hu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)

Abstract

SOI technology is a promising candidate for radio-frequency and microwave applications. In this work, SOI low-noise amplifiers (LNA) operating at 1.8-GHz under 1.5-V power supply are reported for the first time and the high-frequency noise characteristics are studied. A physical SOI thermal noise model is applied, and all the major noise sources associated with the transistors are modeled. SPICE simulation results of the circuit noise agree well with the measurement data. LNA composed of floating-body SOI devices offers better performance than that with body-tied devices.
Original languageEnglish
Pages (from-to)803-809
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume48
Issue number4
DOIs
Publication statusPublished - 1 Apr 2001
Externally publishedYes

Keywords

  • Induced gate noise
  • Low-noise amplifier (LNA)
  • SOI MOSFET
  • Thermal noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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