Nitrogen-ion-energy dependent optical and structural properties of AlN films obtained using a filtered cathodic vacuum arc

We report on the successful fabrication of transparent and uniform aluminum nitride (AlN) III-V semiconductor films using an ion-beam assisted filtered cathodic vacuum arc technique at room temperature. A nitrogen-ion beam with energy varying from 200 to 650 eV has been employed to assist the deposition of AlN films. Effects of the nitrogen-ion-beam energy on optical and structural properties of AlN films have been investigated using an optical spectrophotometer, visible Raman spectroscopy, x-ray diffraction, atomic force microscopy and nanomechanical test instruments. The optical and structural properties of the AlN films depend significantly on the nitrogen-ion-beam energy. The AlN films deposited under ion energies below 300 eV are all amorphous and enhanced polycrystalline AlN films are obtained for energies above 400 eV.