Nitrogen-ion-energy dependent optical and structural properties of AlN films obtained using a filtered cathodic vacuum arc

X. H. Ji, Shu Ping Lau, G. Q. Yu, W. H. Zhong, Y. G. Wang, B. K. Tay

Research output: Journal article publicationJournal articleAcademic researchpeer-review

11 Citations (Scopus)


We report on the successful fabrication of transparent and uniform aluminum nitride (AlN) III-V semiconductor films using an ion-beam assisted filtered cathodic vacuum arc technique at room temperature. A nitrogen-ion beam with energy varying from 200 to 650 eV has been employed to assist the deposition of AlN films. Effects of the nitrogen-ion-beam energy on optical and structural properties of AlN films have been investigated using an optical spectrophotometer, visible Raman spectroscopy, x-ray diffraction, atomic force microscopy and nanomechanical test instruments. The optical and structural properties of the AlN films depend significantly on the nitrogen-ion-beam energy. The AlN films deposited under ion energies below 300 eV are all amorphous and enhanced polycrystalline AlN films are obtained for energies above 400 eV.
Original languageEnglish
Pages (from-to)2543-2547
Number of pages5
JournalJournal of Physics D: Applied Physics
Issue number20
Publication statusPublished - 21 Oct 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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