We report on the successful fabrication of transparent and uniform aluminum nitride (AlN) III-V semiconductor films using an ion-beam assisted filtered cathodic vacuum arc technique at room temperature. A nitrogen-ion beam with energy varying from 200 to 650 eV has been employed to assist the deposition of AlN films. Effects of the nitrogen-ion-beam energy on optical and structural properties of AlN films have been investigated using an optical spectrophotometer, visible Raman spectroscopy, x-ray diffraction, atomic force microscopy and nanomechanical test instruments. The optical and structural properties of the AlN films depend significantly on the nitrogen-ion-beam energy. The AlN films deposited under ion energies below 300 eV are all amorphous and enhanced polycrystalline AlN films are obtained for energies above 400 eV.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films