Nitrided HfTiON/Ga2O3(Gd2O3) as stacked gate dielectric for GaAs MOS applications

Li Sheng Wang, Jing Ping Xu, Lu Liu, Wing Man Tang, Pui To Lai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

17 Citations (Scopus)


GaAs metal-oxide-semiconductor (MOS) capacitors with HfTiON as a gate dielectric and Ga2O3(Gd2O3) (GGO) as an interlayer annealed in NH3 or N2 are fabricated, and their electrical properties are characterized. Experimental results show that the HfTiON/GGO/GaAs MOS device annealed in NH3 exhibits a low interface-state density (1.1 × 1012cm-2 eV -1), a small gate leakage current (1.66 × 10 -4Acm-2 at Vg = Vfb + 1 V), a large equivalent dielectric constant (25.7), and a good capacitance-voltage behavior. All these should be attributed to the fact that the GGO interlayer and postdeposition annealing in NH3 can effectively suppress the formation of interfacial Ga/As oxides and remove the excess As atoms at the GaAs surface, thus reducing the relevant defects at/near the GGO/GaAs interface.
Original languageEnglish
Article number061201
JournalApplied Physics Express
Issue number6
Publication statusPublished - 1 Jan 2014

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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