Hafnium oxide films were RF sputtered from HfO2target in Ar/O2or Ar/N2ambient on silicon substrates. The composition of the deposited films was analyzed by X-ray photoelectron spectroscopy (XPS). For samples sputtered in Ar/N2, it was observed that nitrogen was incorporated in the bulk of hafnium oxide films in the form of HfON, and SiON layer was formed at the silicon-insulator interface. After annealing the hafnium oxide films at 600-700 °C, MOS structures were fabricated and used for electrical characterization. The effects of nitridation of hafnium oxide on both the capacitance-voltage and current-voltage characteristics of the MOS capacitors were discussed.
- Hafnium oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering