Nitridation of hafnium oxide by reactive sputtering

K. Y. Tong; Emil V. Jelenkovic; W. Liu; Jiyan Dai

doi:10.1016/j.mee.2005.09.001

Nitridation of hafnium oxide by reactive sputtering

K. Y. Tong, Emil V. Jelenkovic, W. Liu, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

14 Citations (Scopus)

Abstract

Hafnium oxide films were RF sputtered from HfO2target in Ar/O2or Ar/N2ambient on silicon substrates. The composition of the deposited films was analyzed by X-ray photoelectron spectroscopy (XPS). For samples sputtered in Ar/N2, it was observed that nitrogen was incorporated in the bulk of hafnium oxide films in the form of HfON, and SiON layer was formed at the silicon-insulator interface. After annealing the hafnium oxide films at 600-700 °C, MOS structures were fabricated and used for electrical characterization. The effects of nitridation of hafnium oxide on both the capacitance-voltage and current-voltage characteristics of the MOS capacitors were discussed.

Original language	English
Pages (from-to)	293-297
Number of pages	5
Journal	Microelectronic Engineering
Volume	83
Issue number	2
DOIs	https://doi.org/10.1016/j.mee.2005.09.001
Publication status	Published - 1 Feb 2006

Keywords

Hafnium oxide
Sputtering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2005.09.001

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abstract = "Hafnium oxide films were RF sputtered from HfO2target in Ar/O2or Ar/N2ambient on silicon substrates. The composition of the deposited films was analyzed by X-ray photoelectron spectroscopy (XPS). For samples sputtered in Ar/N2, it was observed that nitrogen was incorporated in the bulk of hafnium oxide films in the form of HfON, and SiON layer was formed at the silicon-insulator interface. After annealing the hafnium oxide films at 600-700 °C, MOS structures were fabricated and used for electrical characterization. The effects of nitridation of hafnium oxide on both the capacitance-voltage and current-voltage characteristics of the MOS capacitors were discussed.",

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AU - Tong, K. Y.

AU - Jelenkovic, Emil V.

AU - Liu, W.

AU - Dai, Jiyan

PY - 2006/2/1

Y1 - 2006/2/1

N2 - Hafnium oxide films were RF sputtered from HfO2target in Ar/O2or Ar/N2ambient on silicon substrates. The composition of the deposited films was analyzed by X-ray photoelectron spectroscopy (XPS). For samples sputtered in Ar/N2, it was observed that nitrogen was incorporated in the bulk of hafnium oxide films in the form of HfON, and SiON layer was formed at the silicon-insulator interface. After annealing the hafnium oxide films at 600-700 °C, MOS structures were fabricated and used for electrical characterization. The effects of nitridation of hafnium oxide on both the capacitance-voltage and current-voltage characteristics of the MOS capacitors were discussed.

AB - Hafnium oxide films were RF sputtered from HfO2target in Ar/O2or Ar/N2ambient on silicon substrates. The composition of the deposited films was analyzed by X-ray photoelectron spectroscopy (XPS). For samples sputtered in Ar/N2, it was observed that nitrogen was incorporated in the bulk of hafnium oxide films in the form of HfON, and SiON layer was formed at the silicon-insulator interface. After annealing the hafnium oxide films at 600-700 °C, MOS structures were fabricated and used for electrical characterization. The effects of nitridation of hafnium oxide on both the capacitance-voltage and current-voltage characteristics of the MOS capacitors were discussed.

KW - Hafnium oxide

KW - Sputtering

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DO - 10.1016/j.mee.2005.09.001

M3 - Journal article

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SP - 293

EP - 297

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 2

ER -

Nitridation of hafnium oxide by reactive sputtering

Abstract

Keywords

ASJC Scopus subject areas

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