Nitridation of hafnium oxide by reactive sputtering

K. Y. Tong, Emil V. Jelenkovic, W. Liu, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

14 Citations (Scopus)


Hafnium oxide films were RF sputtered from HfO2target in Ar/O2or Ar/N2ambient on silicon substrates. The composition of the deposited films was analyzed by X-ray photoelectron spectroscopy (XPS). For samples sputtered in Ar/N2, it was observed that nitrogen was incorporated in the bulk of hafnium oxide films in the form of HfON, and SiON layer was formed at the silicon-insulator interface. After annealing the hafnium oxide films at 600-700 °C, MOS structures were fabricated and used for electrical characterization. The effects of nitridation of hafnium oxide on both the capacitance-voltage and current-voltage characteristics of the MOS capacitors were discussed.
Original languageEnglish
Pages (from-to)293-297
Number of pages5
JournalMicroelectronic Engineering
Issue number2
Publication statusPublished - 1 Feb 2006


  • Hafnium oxide
  • Sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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