Nickel silicide formation on Si(100) and poly-Si with a presilicide N2+implantation

P. S. Lee, D. Mangelinck, K. L. Pey, J. Ding, D. Z. Chi, Jiyan Dai, A. See

Research output: Journal article publicationJournal articleAcademic researchpeer-review

17 Citations (Scopus)


The key feature of this study is to incorporate N2+implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.
Original languageEnglish
Pages (from-to)1554-1559
Number of pages6
JournalJournal of Electronic Materials
Issue number12
Publication statusPublished - 1 Jan 2001
Externally publishedYes


  • Agglomeration
  • Layer inversion
  • N Implant 2 +
  • NiSi
  • Phase stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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