Nickel silicide formation on Si(100) and poly-Si with a presilicide N2+implantation

P. S. Lee; D. Mangelinck; K. L. Pey; J. Ding; D. Z. Chi; Jiyan Dai; A. See

doi:10.1007/s11664-001-0173-1

Nickel silicide formation on Si(100) and poly-Si with a presilicide N₂⁺implantation

P. S. Lee, D. Mangelinck, K. L. Pey, J. Ding, D. Z. Chi, Jiyan Dai, A. See

Research output: Journal article publication › Journal article › Academic research › peer-review

18 Citations (Scopus)

Abstract

The key feature of this study is to incorporate N2+implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.

Original language	English
Pages (from-to)	1554-1559
Number of pages	6
Journal	Journal of Electronic Materials
Volume	30
Issue number	12
DOIs	https://doi.org/10.1007/s11664-001-0173-1
Publication status	Published - 1 Jan 2001
Externally published	Yes

Keywords

Agglomeration
Layer inversion
N Implant 2 +
NiSi
Phase stability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

More information

10.1007/s11664-001-0173-1

Cite this

@article{f5c8f15ee4124519b0c77b371a4346f7,

title = "Nickel silicide formation on Si(100) and poly-Si with a presilicide N2+implantation",

abstract = "The key feature of this study is to incorporate N2+implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.",

keywords = "Agglomeration, Layer inversion, N Implant 2 +, NiSi, Phase stability",

author = "Lee, {P. S.} and D. Mangelinck and Pey, {K. L.} and J. Ding and Chi, {D. Z.} and Jiyan Dai and A. See",

year = "2001",

month = jan,

day = "1",

doi = "10.1007/s11664-001-0173-1",

language = "English",

volume = "30",

pages = "1554--1559",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "12",

}

TY - JOUR

T1 - Nickel silicide formation on Si(100) and poly-Si with a presilicide N2+implantation

AU - Lee, P. S.

AU - Mangelinck, D.

AU - Pey, K. L.

AU - Ding, J.

AU - Chi, D. Z.

AU - Dai, Jiyan

AU - See, A.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The key feature of this study is to incorporate N2+implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.

AB - The key feature of this study is to incorporate N2+implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2+implant is able to suppress agglomeration in the Ni silicide films up to 900°C and enhance the phase stability of NiSi on Si(100) up to 750°C. Stable and low sheet resistance was achieved on the silicided undoped poly-Si up to 700°C due to reduced layer inversion, which is driven by grain boundary energy and the surface energy of the poly-Si.

KW - Agglomeration

KW - Layer inversion

KW - N Implant 2 +

KW - NiSi

KW - Phase stability

UR - http://www.scopus.com/inward/record.url?scp=0035737921&partnerID=8YFLogxK

U2 - 10.1007/s11664-001-0173-1

DO - 10.1007/s11664-001-0173-1

M3 - Journal article

SN - 0361-5235

VL - 30

SP - 1554

EP - 1559

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -