Ni induced few-layer graphene growth at low temperature by pulsed laser deposition

K. Wang; G. Tai; K. H. Wong; Shu Ping Lau; W. Guo

doi:10.1063/1.3602855

Ni induced few-layer graphene growth at low temperature by pulsed laser deposition

K. Wang, G. Tai, K. H. Wong, Shu Ping Lau, W. Guo

Research output: Journal article publication › Journal article › Academic research › peer-review

61 Citations (Scopus)

Abstract

We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm2each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication.

Original language	English
Article number	022141
Journal	AIP Advances
Volume	1
Issue number	2
DOIs	https://doi.org/10.1063/1.3602855
Publication status	Published - 20 Sept 2011

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3602855

http://hdl.handle.net/10397/4424

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Ni induced few-layer graphene growth at low temperature by pulsed laser deposition

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