Ni induced few-layer graphene growth at low temperature by pulsed laser deposition

K. Wang, G. Tai, K. H. Wong, Shu Ping Lau, W. Guo

Research output: Journal article publicationJournal articleAcademic researchpeer-review

58 Citations (Scopus)


We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm2each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication.
Original languageEnglish
Article number022141
JournalAIP Advances
Issue number2
Publication statusPublished - 20 Sep 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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