New twin structures in GaN nanowires

Sheng Dai; Jiong Zhao; Mo Rigen He; Hao Wu; Lin Xie; Jing Zhu

doi:10.1021/jp403263u

New twin structures in GaN nanowires

Sheng Dai, Jiong Zhao, Mo Rigen He, Hao Wu, Lin Xie, Jing Zhu

Research output: Journal article publication › Journal article › Academic research › peer-review

8 Citations (Scopus)

Abstract

Wurtzite-type gallium nitride (GaN) nanowires, with single crystalline and twin structures, were simultaneously synthesized via chemical vapor deposition (CVD) method. High-resolution transmission electron microscopy (HRTEM) was utilized to characterize different twin boundaries (TBs), (103) type TB in acute-angle twin structures, and (304) type TB in obtuse-angle twin structures. In special, the new (304) TB was reported and identified at atomic scale for the first time. With the assistance of molecular dynamics (MD) simulations, the growth mechanism to interpret the prevalence of these obtuse-angle twin nanowires with higher energy of TB is discussed.

Original language	English
Pages (from-to)	12895-12901
Number of pages	7
Journal	Journal of Physical Chemistry C
Volume	117
Issue number	24
DOIs	https://doi.org/10.1021/jp403263u
Publication status	Published - 20 Jun 2013
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/jp403263u

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title = "New twin structures in GaN nanowires",

abstract = "Wurtzite-type gallium nitride (GaN) nanowires, with single crystalline and twin structures, were simultaneously synthesized via chemical vapor deposition (CVD) method. High-resolution transmission electron microscopy (HRTEM) was utilized to characterize different twin boundaries (TBs), (103) type TB in acute-angle twin structures, and (304) type TB in obtuse-angle twin structures. In special, the new (304) TB was reported and identified at atomic scale for the first time. With the assistance of molecular dynamics (MD) simulations, the growth mechanism to interpret the prevalence of these obtuse-angle twin nanowires with higher energy of TB is discussed.",

author = "Sheng Dai and Jiong Zhao and He, {Mo Rigen} and Hao Wu and Lin Xie and Jing Zhu",

year = "2013",

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doi = "10.1021/jp403263u",

language = "English",

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journal = "Journal of Physical Chemistry C",

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TY - JOUR

T1 - New twin structures in GaN nanowires

AU - Dai, Sheng

AU - Zhao, Jiong

AU - He, Mo Rigen

AU - Wu, Hao

AU - Xie, Lin

AU - Zhu, Jing

PY - 2013/6/20

Y1 - 2013/6/20

N2 - Wurtzite-type gallium nitride (GaN) nanowires, with single crystalline and twin structures, were simultaneously synthesized via chemical vapor deposition (CVD) method. High-resolution transmission electron microscopy (HRTEM) was utilized to characterize different twin boundaries (TBs), (103) type TB in acute-angle twin structures, and (304) type TB in obtuse-angle twin structures. In special, the new (304) TB was reported and identified at atomic scale for the first time. With the assistance of molecular dynamics (MD) simulations, the growth mechanism to interpret the prevalence of these obtuse-angle twin nanowires with higher energy of TB is discussed.

AB - Wurtzite-type gallium nitride (GaN) nanowires, with single crystalline and twin structures, were simultaneously synthesized via chemical vapor deposition (CVD) method. High-resolution transmission electron microscopy (HRTEM) was utilized to characterize different twin boundaries (TBs), (103) type TB in acute-angle twin structures, and (304) type TB in obtuse-angle twin structures. In special, the new (304) TB was reported and identified at atomic scale for the first time. With the assistance of molecular dynamics (MD) simulations, the growth mechanism to interpret the prevalence of these obtuse-angle twin nanowires with higher energy of TB is discussed.

UR - http://www.scopus.com/inward/record.url?scp=84879456725&partnerID=8YFLogxK

U2 - 10.1021/jp403263u

DO - 10.1021/jp403263u

M3 - Journal article

SN - 1932-7447

VL - 117

SP - 12895

EP - 12901

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 24

ER -

New twin structures in GaN nanowires

Abstract

ASJC Scopus subject areas

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