New twin structures in GaN nanowires

Sheng Dai, Jiong Zhao, Mo Rigen He, Hao Wu, Lin Xie, Jing Zhu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)


Wurtzite-type gallium nitride (GaN) nanowires, with single crystalline and twin structures, were simultaneously synthesized via chemical vapor deposition (CVD) method. High-resolution transmission electron microscopy (HRTEM) was utilized to characterize different twin boundaries (TBs), (103) type TB in acute-angle twin structures, and (304) type TB in obtuse-angle twin structures. In special, the new (304) TB was reported and identified at atomic scale for the first time. With the assistance of molecular dynamics (MD) simulations, the growth mechanism to interpret the prevalence of these obtuse-angle twin nanowires with higher energy of TB is discussed.
Original languageEnglish
Pages (from-to)12895-12901
Number of pages7
JournalJournal of Physical Chemistry C
Issue number24
Publication statusPublished - 20 Jun 2013
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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