New scheme for complete cancellation of charge injection distortion in second generation switched-current circuits

X. Zeng, Chi Kong Tse, P. S. Tang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

2 Citations (Scopus)

Abstract

This paper begins with an analysis of the charge injection error in the second-generation current memory cell. By combining the circuit-replication technique and the n-step principle, a new scheme for simultaneously cancelling both signal-dependent and signal-independent charge injection errors in second-generation switched-current circuits is proposed. SPICE simulations are used to verify the feasibility and effectiveness of the proposed cell for tackling the charge injection problem. Major merits of the proposed cell include capability to meet high precision requirements and applicability to any second-generation switched-current circuit configuration.
Original languageEnglish
Title of host publicationIEEE Region 10 Annual International Conference, Proceedings/TENCON
PublisherIEEE
Pages127-130
Number of pages4
Publication statusPublished - 1 Dec 1995
EventProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
Duration: 6 Nov 199510 Nov 1995

Conference

ConferenceProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
CountryHong Kong
CityHong Kong
Period6/11/9510/11/95

ASJC Scopus subject areas

  • Engineering(all)

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