Abstract
The advantages of the selected semiconductor photovoltaic active material CuIn1-xGaxSe2(CIGS) and the novel thin film precursor solution electro-deposition technology for obtaining low-cost high-efficiency thin-film solar cells were described. The experimental results of CIGS/Mo/glass structure by using the novel electrodeposition technology were given under support of the Innovation and Technology Fund of The Government of The Hong Kong Special Administrative Region, China. The results show that the polycrystalline CIGS thin film layer can be obtained by this method, in which the polycrystalline CIGS is definitely identified by the (112), (204, 220) characteristic peaks of the tetragonal structure, the continuous CIGS thin film layer with the particles average size of about 2 μm of length and around 1.6 μm of thin film thickness. The thickness and solar-grade quality of CIGS precursor thin films can be produced with good repeatability.
| Original language | English |
|---|---|
| Pages (from-to) | 301-307 |
| Number of pages | 7 |
| Journal | Taiyangneng Xuebao/Acta Energiae Solaris Sinica |
| Volume | 23 |
| Issue number | 3 |
| Publication status | Published - 1 Jun 2002 |
Keywords
- Electrodeposition
- Photovoltaic material
- Thin film solar cell
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Renewable Energy, Sustainability and the Environment
- Energy Engineering and Power Technology
