New mechanism for subsurface imaging in silicon

S. J. Sheard, Michael Geoffrey Somekh

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)

Abstract

We report the use of photothermal radiometric microscopy to image through silicon wafers. Experimental results are presented which show that the signal obtained decreases as the normal emissivity of the material on the back surface increases. The theory for the emissivity of partially transparent objects has been extended to explain these findings. We conclude that the contrast is due to photon-induced switching of the infra-red transmission coefficient of the silicon.
Original languageEnglish
Pages (from-to)1134-1136
Number of pages3
JournalElectronics Letters
Volume23
Issue number21
DOIs
Publication statusPublished - 1 Jan 1987
Externally publishedYes

Keywords

  • Microscopy
  • Semiconductor devices and materials
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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