Negative capacitance 2D MoS2transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free

Zhihao Yu; Hanchen Wang; Weisheng Li; Sheng Xu; Xiongfei Song; Shuxian Wang; Peng Wang; Peng Zhou; Yi Shi; Yang Chai; Xinran Wang

doi:10.1109/IEDM.2017.8268448

Negative capacitance 2D MoS₂transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free

Zhihao Yu
, Hanchen Wang
, Weisheng Li
, Sheng Xu
, Xiongfei Song
, Shuxian Wang
, Peng Wang
, Peng Zhou
, Yi Shi
, Yang Chai
, Xinran Wang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

32 Citations (Scopus)

Abstract

To realize steep-slope MoS ₂ n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrO _x (HZO)/AlO _x as dielectric layer. The MoS ₂ NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of I _D, nearly hysteresis-free up to V _DS = 1V, small |V _TH| <0.4V, I _ON/I _OFF ratio >10 ⁹, and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of I _D using a gate drive of 232 mV, clearly demonstrating the potential of MoS ₂ NCFET for low-power electronics applications. Furthermore, compared to normal MoS ₂ FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60% improvement in I _D (250 μA/μm) and 4 times improvement in transconductance.

Original language	English
Title of host publication	2017 IEEE International Electron Devices Meeting, IEDM 2017
Publisher	IEEE
Pages	23.6.1-23.6.4
ISBN (Electronic)	9781538635599
DOIs	https://doi.org/10.1109/IEDM.2017.8268448
Publication status	Published - 23 Jan 2018
Event	63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: 2 Dec 2017 → 6 Dec 2017

Conference

Conference	63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/Territory	United States
City	San Francisco
Period	2/12/17 → 6/12/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

More information

10.1109/IEDM.2017.8268448

Cite this

Yu, Z., Wang, H., Li, W., Xu, S., Song, X., Wang, S., Wang, P., Zhou, P., Shi, Y., Chai, Y., & Wang, X. (2018). Negative capacitance 2D MoS₂transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 23.6.1-23.6.4). IEEE. https://doi.org/10.1109/IEDM.2017.8268448

@inproceedings{ae4fc79779b84764a977c4a669925cf5,

title = "Negative capacitance 2D MoS2transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free",

abstract = "To realize steep-slope MoS 2 n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrO x (HZO)/AlO x as dielectric layer. The MoS 2 NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of I D, nearly hysteresis-free up to V DS = 1V, small |V TH| <0.4V, I ON/I OFF ratio >10 9, and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of I D using a gate drive of 232 mV, clearly demonstrating the potential of MoS 2 NCFET for low-power electronics applications. Furthermore, compared to normal MoS 2 FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60\% improvement in I D (250 μA/μm) and 4 times improvement in transconductance. ",

author = "Zhihao Yu and Hanchen Wang and Weisheng Li and Sheng Xu and Xiongfei Song and Shuxian Wang and Peng Wang and Peng Zhou and Yi Shi and Yang Chai and Xinran Wang",

year = "2018",

month = jan,

day = "23",

doi = "10.1109/IEDM.2017.8268448",

language = "English",

pages = "23.6.1--23.6.4",

booktitle = "2017 IEEE International Electron Devices Meeting, IEDM 2017",

publisher = "IEEE",

address = "United States",

note = "63rd IEEE International Electron Devices Meeting, IEDM 2017 ; Conference date: 02-12-2017 Through 06-12-2017",

}

Yu, Z, Wang, H, Li, W, Xu, S, Song, X, Wang, S, Wang, P, Zhou, P, Shi, Y, Chai, Y & Wang, X 2018, Negative capacitance 2D MoS₂transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free. in 2017 IEEE International Electron Devices Meeting, IEDM 2017. IEEE, pp. 23.6.1-23.6.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, United States, 2/12/17. https://doi.org/10.1109/IEDM.2017.8268448

Negative capacitance 2D MoS₂transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free. / Yu, Zhihao; Wang, Hanchen; Li, Weisheng et al.
2017 IEEE International Electron Devices Meeting, IEDM 2017. IEEE, 2018. p. 23.6.1-23.6.4.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Negative capacitance 2D MoS2transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free

AU - Yu, Zhihao

AU - Wang, Hanchen

AU - Li, Weisheng

AU - Xu, Sheng

AU - Song, Xiongfei

AU - Wang, Shuxian

AU - Wang, Peng

AU - Zhou, Peng

AU - Shi, Yi

AU - Chai, Yang

AU - Wang, Xinran

PY - 2018/1/23

Y1 - 2018/1/23

N2 - To realize steep-slope MoS 2 n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrO x (HZO)/AlO x as dielectric layer. The MoS 2 NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of I D, nearly hysteresis-free up to V DS = 1V, small |V TH| <0.4V, I ON/I OFF ratio >10 9, and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of I D using a gate drive of 232 mV, clearly demonstrating the potential of MoS 2 NCFET for low-power electronics applications. Furthermore, compared to normal MoS 2 FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60% improvement in I D (250 μA/μm) and 4 times improvement in transconductance.

AB - To realize steep-slope MoS 2 n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrO x (HZO)/AlO x as dielectric layer. The MoS 2 NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of I D, nearly hysteresis-free up to V DS = 1V, small |V TH| <0.4V, I ON/I OFF ratio >10 9, and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of I D using a gate drive of 232 mV, clearly demonstrating the potential of MoS 2 NCFET for low-power electronics applications. Furthermore, compared to normal MoS 2 FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60% improvement in I D (250 μA/μm) and 4 times improvement in transconductance.

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DO - 10.1109/IEDM.2017.8268448

M3 - Conference article published in proceeding or book

SP - 23.6.1-23.6.4

BT - 2017 IEEE International Electron Devices Meeting, IEDM 2017

PB - IEEE

T2 - 63rd IEEE International Electron Devices Meeting, IEDM 2017

Y2 - 2 December 2017 through 6 December 2017

ER -