Negative capacitance 2D MoS2transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free

Zhihao Yu, Hanchen Wang, Weisheng Li, Sheng Xu, Xiongfei Song, Shuxian Wang, Peng Wang, Peng Zhou, Yi Shi, Yang Chai, Xinran Wang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

16 Citations (Scopus)

Abstract

To realize steep-slope MoS 2 n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrO x (HZO)/AlO x as dielectric layer. The MoS 2 NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of I D, nearly hysteresis-free up to V DS = 1V, small |V TH| <0.4V, I ON/I OFF ratio >10 9, and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of I D using a gate drive of 232 mV, clearly demonstrating the potential of MoS 2 NCFET for low-power electronics applications. Furthermore, compared to normal MoS 2 FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60% improvement in I D (250 μA/μm) and 4 times improvement in transconductance.

Original languageEnglish
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherIEEE
Pages23.6.1-23.6.4
ISBN (Electronic)9781538635599
DOIs
Publication statusPublished - 23 Jan 2018
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: 2 Dec 20176 Dec 2017

Conference

Conference63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/TerritoryUnited States
CitySan Francisco
Period2/12/176/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this