Abstract
To realize steep-slope MoS 2 n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrO x (HZO)/AlO x as dielectric layer. The MoS 2 NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of I D, nearly hysteresis-free up to V DS = 1V, small |V TH| <0.4V, I ON/I OFF ratio >10 9, and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of I D using a gate drive of 232 mV, clearly demonstrating the potential of MoS 2 NCFET for low-power electronics applications. Furthermore, compared to normal MoS 2 FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60% improvement in I D (250 μA/μm) and 4 times improvement in transconductance.
Original language | English |
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Title of host publication | 2017 IEEE International Electron Devices Meeting, IEDM 2017 |
Publisher | IEEE |
Pages | 23.6.1-23.6.4 |
ISBN (Electronic) | 9781538635599 |
DOIs | |
Publication status | Published - 23 Jan 2018 |
Event | 63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: 2 Dec 2017 → 6 Dec 2017 |
Conference
Conference | 63rd IEEE International Electron Devices Meeting, IEDM 2017 |
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Country/Territory | United States |
City | San Francisco |
Period | 2/12/17 → 6/12/17 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry