Keyphrases
Amorphous Carbon
100%
Memory-based
100%
Bipolar Resistive Switching
100%
Resistive Random Access Memory (ReRAM)
100%
Complementary Resistive Switching
100%
Carbon Nanotube Electrode
75%
Carbon-based
50%
Memory Cell
50%
Low Power
25%
Power Consumption
25%
Active Devices
25%
Switching Behavior
25%
Memory Device
25%
Nanometer Size
25%
Electrode Size
25%
Metal Electrode
25%
Amorphous Carbon Layer
25%
Size Scaling
25%
Downscaling
25%
High Resistance State
25%
Device Area
25%
Ultra-dense
25%
Cross-point Memory
25%
Bipolar Switching
25%
Sneak Current
25%
Nonvolatile Memory Technologies
25%
Engineering
Resistive
100%
Amorphous Carbon
100%
Nanoscale
100%
Carbon Nanotubes
75%
Electric Power Utilization
25%
Nanometre
25%
Carbon Layer
25%
Active Device
25%
Electrode Size
25%
Point Memory
25%
Nonvolatile Memory
25%
High Resistance State
25%
Information Bit
25%
Resistive Random Access Memory
25%
Random Access Memory Device
25%
Cross Point
25%
Material Science
Amorphous Carbon
100%
Carbon Nanotubes
100%
Resistive Random-Access Memory
33%