Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon

Yang Chai, Yi Wu, Kuniharu Takei, Hong Yu Chen, Shimeng Yu, Philip Ching Ho Chan, Ali Javey, H. S.Philip Wong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

69 Citations (Scopus)


There has been a strong demand for developing an ultradense and low-power nonvolatile memory technology. In this paper, we present a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode. An amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior. The use of the CNT electrode can substantially reduce the size of the active device area. We also demonstrate a carbon-based complementary resistive switch (CRS) consisting of two back-to-back connected memory cells, providing a route to reduce the sneak current in the cross-point memory. The bit information of the CRS cell is stored in a high-resistance state, thus reducing the power consumption of the CRS memory cell. This paper provides valuable early data on the effect of electrode size scaling down to nanometer size.
Original languageEnglish
Article number6026917
Pages (from-to)3933-3939
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 1 Nov 2011


  • Amorphous carbon (a-C)
  • carbon nanotube (CNT)
  • complementary resistive switching
  • nonvolatile memory
  • resistive random access memory (RRAM)
  • resistive switching memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this