Nanolithography on silicon surface using a tuning-fork STM/AFM

H.Y. Lin, C.C. Fan, Din-ping Tsai, F.S. Chien, S. Gwo, W.-F. Hsieh

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)

Abstract

A tapping-mode atomic force microscopy (AFM)/scanning tunneling microscopy (STM) system using a non-optical tuning fork force-sensing method has been developed for the scanning probe lithography. In comparisons, with the nanolithography done by AFM with the conductive cantilever tip, our method has the following advantages: (1) It has longer tapered length STM tip and smaller half cone angle to perform the nanometer scale patterning with high aspect ratio. (2) Its low cost tungsten or Pt/Ir STM tip can be easily fabricated and attached to our AFM force-sensing tuning fork. (3) It can be easily adapted to large-scale parallel processing because of the all-electric force-sensing methods. Nanostructures with high aspect ratios and large depths have been successfully performed on the silicon surface by using our AFM/STM nano-pattering system followed by the differential etching process. Lines with different widths and matrices of dots with various diameters were demonstrated for potential applications.
Original languageEnglish
Pages (from-to)354-359
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4416
DOIs
Publication statusPublished - 1 Jan 2001
Externally publishedYes

Keywords

  • Bias voltage
  • Etching
  • Humidity
  • Nanolithography
  • Oxide
  • Tungsten tip
  • Tuning fork

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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