Abstract
A tapping-mode atomic force microscopy (AFM)/scanning tunneling microscopy (STM) system using a non-optical tuning fork force-sensing method has been developed for the scanning probe lithography. In comparisons, with the nanolithography done by AFM with the conductive cantilever tip, our method has the following advantages: (1) It has longer tapered length STM tip and smaller half cone angle to perform the nanometer scale patterning with high aspect ratio. (2) Its low cost tungsten or Pt/Ir STM tip can be easily fabricated and attached to our AFM force-sensing tuning fork. (3) It can be easily adapted to large-scale parallel processing because of the all-electric force-sensing methods. Nanostructures with high aspect ratios and large depths have been successfully performed on the silicon surface by using our AFM/STM nano-pattering system followed by the differential etching process. Lines with different widths and matrices of dots with various diameters were demonstrated for potential applications.
| Original language | English |
|---|---|
| Pages (from-to) | 354-359 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4416 |
| DOIs | |
| Publication status | Published - 1 Jan 2001 |
| Externally published | Yes |
Keywords
- Bias voltage
- Etching
- Humidity
- Nanolithography
- Oxide
- Tungsten tip
- Tuning fork
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering