Nanofabrication for multi states of Ge2Sb2Te5 by femto-seond laser induced forward transfer

Ming Lun Tseng; Bo Han Chen; Cheng Hung Chu; Chia Min Chang; Hai Pang Chiang; Din Ping Tsai

Nanofabrication for multi states of Ge₂Sb₂Te₅ by femto-seond laser induced forward transfer

Ming Lun Tseng, Bo Han Chen, Cheng Hung Chu, Chia Min Chang, Hai Pang Chiang, Din Ping Tsai

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

The nano patterns of phase-change material Ge₂Sb₂Te₅ are fabricated by the femto-second laser-induced forward transfer method. The size and the phase state of the Ge₂Sb₂Te₅ patterns can be effectively controlled by varying the applied laser fluence and film thickness. Also, the multilevel electronic states of fabricated patterns are observed through the conductive-atomic force microscopy. This research has great potential in the area of the optical and the electrical data storage.

Original language	English
Title of host publication	Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011
Publisher	Optical Society of American (OSA)
ISBN (Print)	9781557529152
Publication status	Published - Jul 2011
Externally published	Yes
Event	Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011 - Kauai, HI, United States Duration: 17 Jul 2011 → 20 Jul 2011

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011
Country/Territory	United States
City	Kauai, HI
Period	17/07/11 → 20/07/11

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{b041a2e9456249789aec298aad3826fe,

title = "Nanofabrication for multi states of Ge2Sb2Te5 by femto-seond laser induced forward transfer",

abstract = "The nano patterns of phase-change material Ge2Sb2Te5 are fabricated by the femto-second laser-induced forward transfer method. The size and the phase state of the Ge2Sb2Te5 patterns can be effectively controlled by varying the applied laser fluence and film thickness. Also, the multilevel electronic states of fabricated patterns are observed through the conductive-atomic force microscopy. This research has great potential in the area of the optical and the electrical data storage.",

author = "Tseng, {Ming Lun} and Chen, {Bo Han} and Chu, {Cheng Hung} and Chang, {Chia Min} and Chiang, {Hai Pang} and Tsai, {Din Ping}",

year = "2011",

month = jul,

language = "English",

isbn = "9781557529152",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of American (OSA)",

booktitle = "Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011",

note = "Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011 ; Conference date: 17-07-2011 Through 20-07-2011",

}

Tseng, ML, Chen, BH, Chu, CH, Chang, CM, Chiang, HP & Tsai, DP 2011, Nanofabrication for multi states of Ge₂Sb₂Te₅ by femto-seond laser induced forward transfer. in Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011. Optics InfoBase Conference Papers, Optical Society of American (OSA), Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011, Kauai, HI, United States, 17/07/11.

Nanofabrication for multi states of Ge₂Sb₂Te₅ by femto-seond laser induced forward transfer. / Tseng, Ming Lun; Chen, Bo Han; Chu, Cheng Hung et al.
Joint International Symposium on Optical Memory and Optical Data Storage, ISOM_ODS 2011. Optical Society of American (OSA), 2011. (Optics InfoBase Conference Papers).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Chiang, Hai Pang

AU - Tsai, Din Ping

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AB - The nano patterns of phase-change material Ge2Sb2Te5 are fabricated by the femto-second laser-induced forward transfer method. The size and the phase state of the Ge2Sb2Te5 patterns can be effectively controlled by varying the applied laser fluence and film thickness. Also, the multilevel electronic states of fabricated patterns are observed through the conductive-atomic force microscopy. This research has great potential in the area of the optical and the electrical data storage.

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