Nano-optomechanical static random access memory (SRAM)

B. Dong; H. Cai; Y. D. Gu; Z. C. Yang; Y. F. Jin; Y. L. Hao; D. L. Kwong; A. Q. Liu

doi:10.1109/MEMSYS.2015.7050883

Nano-optomechanical static random access memory (SRAM)

B. Dong, H. Cai, Y. D. Gu, Z. C. Yang, Y. F. Jin, Y. L. Hao, D. L. Kwong, A. Q. Liu

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

3 Citations (Scopus)

Abstract

This paper reports an on chip nano-optomechanical SRAM, which is integrated with light modulation system on a single silicon chip. In particular, a doubly-clamped silicon beam shows bistability due to the non-linear optical gradient force generated from a ring resonator. The memory states are assigned with two stable deformation positions, which can be switched by modulating the control light's power with the integrated optical modulator. The optical SRAM has write/read time around 120 ns, which is much faster as compared with traditional MEMS memory. Meanwhile, the write and read processes can happen concurrently without interference, which further reduces the time as compared with conventional electrical enabled SRAM.

Original language	English
Title of host publication	2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	49-52
Number of pages	4
Edition	February
ISBN (Electronic)	9781479979554
DOIs	https://doi.org/10.1109/MEMSYS.2015.7050883
Publication status	Published - 26 Feb 2015
Externally published	Yes
Event	2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 - Estoril, Portugal Duration: 18 Jan 2015 → 22 Jan 2015

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Number	February
Volume	2015-February
ISSN (Print)	1084-6999

Conference

Conference	2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015
Country/Territory	Portugal
City	Estoril
Period	18/01/15 → 22/01/15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

More information

10.1109/MEMSYS.2015.7050883

Cite this

Dong, B., Cai, H., Gu, Y. D., Yang, Z. C., Jin, Y. F., Hao, Y. L., Kwong, D. L., & Liu, A. Q. (2015). Nano-optomechanical static random access memory (SRAM). In 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 (February ed., pp. 49-52). Article 7050883 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2015.7050883

Dong, B. ; Cai, H. ; Gu, Y. D. et al. / Nano-optomechanical static random access memory (SRAM). 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 49-52 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); February).

@inproceedings{431e706bdbde4c29a7f8e74f0fca7273,

title = "Nano-optomechanical static random access memory (SRAM)",

abstract = "This paper reports an on chip nano-optomechanical SRAM, which is integrated with light modulation system on a single silicon chip. In particular, a doubly-clamped silicon beam shows bistability due to the non-linear optical gradient force generated from a ring resonator. The memory states are assigned with two stable deformation positions, which can be switched by modulating the control light's power with the integrated optical modulator. The optical SRAM has write/read time around 120 ns, which is much faster as compared with traditional MEMS memory. Meanwhile, the write and read processes can happen concurrently without interference, which further reduces the time as compared with conventional electrical enabled SRAM.",

author = "B. Dong and H. Cai and Gu, {Y. D.} and Yang, {Z. C.} and Jin, {Y. F.} and Hao, {Y. L.} and Kwong, {D. L.} and Liu, {A. Q.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 ; Conference date: 18-01-2015 Through 22-01-2015",

year = "2015",

month = feb,

day = "26",

doi = "10.1109/MEMSYS.2015.7050883",

language = "English",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "February",

pages = "49--52",

booktitle = "2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015",

edition = "February",

}

Dong, B, Cai, H, Gu, YD, Yang, ZC, Jin, YF, Hao, YL, Kwong, DL & Liu, AQ 2015, Nano-optomechanical static random access memory (SRAM). in 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February edn, 7050883, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 49-52, 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015, Estoril, Portugal, 18/01/15. https://doi.org/10.1109/MEMSYS.2015.7050883

Nano-optomechanical static random access memory (SRAM). / Dong, B.; Cai, H.; Gu, Y. D. et al.
2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 49-52 7050883 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2015-February, No. February).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Nano-optomechanical static random access memory (SRAM)

AU - Dong, B.

AU - Cai, H.

AU - Gu, Y. D.

AU - Yang, Z. C.

AU - Jin, Y. F.

AU - Hao, Y. L.

AU - Kwong, D. L.

AU - Liu, A. Q.

PY - 2015/2/26

Y1 - 2015/2/26

N2 - This paper reports an on chip nano-optomechanical SRAM, which is integrated with light modulation system on a single silicon chip. In particular, a doubly-clamped silicon beam shows bistability due to the non-linear optical gradient force generated from a ring resonator. The memory states are assigned with two stable deformation positions, which can be switched by modulating the control light's power with the integrated optical modulator. The optical SRAM has write/read time around 120 ns, which is much faster as compared with traditional MEMS memory. Meanwhile, the write and read processes can happen concurrently without interference, which further reduces the time as compared with conventional electrical enabled SRAM.

AB - This paper reports an on chip nano-optomechanical SRAM, which is integrated with light modulation system on a single silicon chip. In particular, a doubly-clamped silicon beam shows bistability due to the non-linear optical gradient force generated from a ring resonator. The memory states are assigned with two stable deformation positions, which can be switched by modulating the control light's power with the integrated optical modulator. The optical SRAM has write/read time around 120 ns, which is much faster as compared with traditional MEMS memory. Meanwhile, the write and read processes can happen concurrently without interference, which further reduces the time as compared with conventional electrical enabled SRAM.

UR - http://www.scopus.com/inward/record.url?scp=84931036478&partnerID=8YFLogxK

U2 - 10.1109/MEMSYS.2015.7050883

DO - 10.1109/MEMSYS.2015.7050883

M3 - Conference article published in proceeding or book

AN - SCOPUS:84931036478

T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 49

EP - 52

BT - 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015

Y2 - 18 January 2015 through 22 January 2015

ER -

Dong B, Cai H, Gu YD, Yang ZC, Jin YF, Hao YL et al. Nano-optomechanical static random access memory (SRAM). In 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 49-52. 7050883. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); February). doi: 10.1109/MEMSYS.2015.7050883

Nano-optomechanical static random access memory (SRAM)

Abstract

Publication series

Conference

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this