N-channel polysilicon thin film transistors as gamma-ray detectors

Emil V. Jelenković; Milan S. Kovačević; Dragan Z. Stupar; Jovan S. Bajić; Miloš P. Slankamenac; Milojko Kovačević; Suet To

doi:10.1088/0957-0233/24/10/105103

N-channel polysilicon thin film transistors as gamma-ray detectors

Emil V. Jelenković, Milan S. Kovačević, Dragan Z. Stupar, Jovan S. Bajić, Miloš P. Slankamenac, Milojko Kovačević, Suet To

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.

Original language	English
Article number	105103
Journal	Measurement Science and Technology
Volume	24
Issue number	10
DOIs	https://doi.org/10.1088/0957-0233/24/10/105103
Publication status	Published - 1 Jan 2013

Keywords

drain current
gamma-ray detectors
Thin film transistors
threshold voltage

ASJC Scopus subject areas

Instrumentation
Applied Mathematics

More information

10.1088/0957-0233/24/10/105103

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@article{d9911eabc94d4f8fad099314cf6b6483,

title = "N-channel polysilicon thin film transistors as gamma-ray detectors",

abstract = "N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.",

keywords = "drain current, gamma-ray detectors, Thin film transistors, threshold voltage",

author = "Jelenkovi{\'c}, {Emil V.} and Kova{\v c}evi{\'c}, {Milan S.} and Stupar, {Dragan Z.} and Baji{\'c}, {Jovan S.} and Slankamenac, {Milo{\v s} P.} and Milojko Kova{\v c}evi{\'c} and Suet To",

year = "2013",

month = jan,

day = "1",

doi = "10.1088/0957-0233/24/10/105103",

language = "English",

volume = "24",

journal = "Measurement Science and Technology",

issn = "0957-0233",

publisher = "IOP Publishing Ltd.",

number = "10",

}

TY - JOUR

T1 - N-channel polysilicon thin film transistors as gamma-ray detectors

AU - Jelenković, Emil V.

AU - Kovačević, Milan S.

AU - Stupar, Dragan Z.

AU - Bajić, Jovan S.

AU - Slankamenac, Miloš P.

AU - Kovačević, Milojko

AU - To, Suet

PY - 2013/1/1

Y1 - 2013/1/1

N2 - N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.

AB - N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.

KW - drain current

KW - gamma-ray detectors

KW - Thin film transistors

KW - threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=84884756086&partnerID=8YFLogxK

U2 - 10.1088/0957-0233/24/10/105103

DO - 10.1088/0957-0233/24/10/105103

M3 - Journal article

SN - 0957-0233

VL - 24

JO - Measurement Science and Technology

JF - Measurement Science and Technology

IS - 10

M1 - 105103

ER -

N-channel polysilicon thin film transistors as gamma-ray detectors

Abstract

Keywords

ASJC Scopus subject areas

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