N- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors

Yeung Yu Hui, Guo'An Tai, Zhenhua Sun, Zihan Xu, Ning Wang, Feng Yan, Shu Ping Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

21 Citations (Scopus)


Periodic zinc oxide (ZnO) nanomeshes of different thicknesses were deposited on single-layer graphene to form back-gated field effect transistors (GFETs). The GFETs exhibit tunable electronic properties, featuring n- and p-type characteristics by merely controlling the thickness of the ZnO nanomesh layer. Furthermore, the effect of thermal strain on the GFETs from the substrate is suppressed by the ZnO nanomesh, which improves the thermal stability of the GFETs. This nanopatterning technique could modulate the electronic properties of the GFETs effectively.
Original languageEnglish
Pages (from-to)3118-3122
Number of pages5
Issue number10
Publication statusPublished - 21 May 2012

ASJC Scopus subject areas

  • Materials Science(all)

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