Multiple layers of CMOS integrated circuits using recrystallized silicon film

Keyphrases

• Recrystallized 100%
• Large Grain 100%
• Silicon Film 100%
• Polysilicon 100%
• CMOS Integrated Circuits 100%
• Multiple Layers 100%
• Insulator 66%
• Transistor 66%
• Three-dimensional (3D) 33%
• High Performance 33%
• Recrystallization 33%
• Amorphous Silicon 33%
• Circuit-based 33%
• Grain Size 33%
• Oxides 33%
• Conventional CMOS 33%
• CMOS Inverter 33%
• SOI CMOS 33%
• N-channel 33%
• P-channel 33%
• Device Stacking 33%
• 3D IC 33%
• Insulator Film 33%
• Metal-induced Crystallization 33%
• Transistor Performance 33%
• Interlayer Dielectric 33%

Material Science

• Electronic Circuit 100%
• Transistor 100%
• Film 100%
• Silicon 100%
• Grain Size 33%
• Amorphous Silicon 33%
• Oxide Compound 33%
• Dielectric Material 33%

Engineering

• CMOS Integrated Circuits 100%
• Film Silicon 100%
• Polysilicon 100%
• Inverter 33%
• Channel Device 33%
• Three Dimensional Integrated Circuits 33%
• Dielectrics 33%
• Interlayer 33%