Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device

Tsz Lung Ho; Keda Ding; Nikolay Lyapunov; Chun Hung Suen; Lok Wing Wong; Jiong Zhao; Ming Yang; Xiaoyuan Zhou; Jiyan Dai

doi:10.3390/nano12132128

Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device

Tsz Lung Ho, Keda Ding, Nikolay Lyapunov, Chun Hung Suen, Lok Wing Wong, Jiong Zhao, Ming Yang, Xiaoyuan Zhou, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

11 Citations (Scopus)

Abstract

Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO ₃ (STO) heterojunction-based memory devices with silver (Ag) and copper (Cu) top electrodes. The SnSe/STO-based memory devices present bipolar resistive switching (RS) with two orders of magnitude on/off ratio, which is reliable and stable. Moreover, multilevel state switching is achieved in the devices by sweeping voltage with current compliance to SET the device from high resistance state (HRS) to low resistance state (LRS) and RESET from LRS to HRS by voltage pulses without compliance current. With Ag and Cu top electrodes, respectively, eight and six levels of resistance switching were demonstrated in the SnSe/SrTiO ₃ heterostructures with a Pt bottom electrode. These results suggest that a SnSe/STO heterojunction-based memristor is promising for applications in neuromorphic computing as a synaptic device.

Original language	English
Article number	2128
Journal	Nanomaterials
Volume	12
Issue number	13
DOIs	https://doi.org/10.3390/nano12132128
Publication status	Published - Jun 2022

Keywords

RRAM
SnSe
SrTiO
memristor
perovskite

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science

More information

10.3390/nano12132128

http://hdl.handle.net/10397/97178

Cite this

@article{42fd1caed6914d06879060a5171417a8,

title = "Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device",

abstract = "Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO 3 (STO) heterojunction-based memory devices with silver (Ag) and copper (Cu) top electrodes. The SnSe/STO-based memory devices present bipolar resistive switching (RS) with two orders of magnitude on/off ratio, which is reliable and stable. Moreover, multilevel state switching is achieved in the devices by sweeping voltage with current compliance to SET the device from high resistance state (HRS) to low resistance state (LRS) and RESET from LRS to HRS by voltage pulses without compliance current. With Ag and Cu top electrodes, respectively, eight and six levels of resistance switching were demonstrated in the SnSe/SrTiO 3 heterostructures with a Pt bottom electrode. These results suggest that a SnSe/STO heterojunction-based memristor is promising for applications in neuromorphic computing as a synaptic device.",

keywords = "RRAM, SnSe, SrTiO, memristor, perovskite",

author = "Ho, {Tsz Lung} and Keda Ding and Nikolay Lyapunov and Suen, {Chun Hung} and Wong, {Lok Wing} and Jiong Zhao and Ming Yang and Xiaoyuan Zhou and Jiyan Dai",

note = "Funding Information: Funding: We acknowledge the support from Hong Kong GRF grant (No. 15301421), the Guangdong– Hong Kong–Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices (GDSTC No. 2019B121205001), and the Hong Kong Polytechnic University (Grant Nos. 1-ZVSQ, UAEZ). X. Zhou acknowledges financial support from the National Natural Science Foundation of China (NSFC) (grant nos. 11674040, 11904039) and the Fundamental Research Funds for the Central Universities (grant nos. 2018CDQYWL0048, 106112017CDJQJ308821, and 2018CDPTCG0001/26). N.L. also acknowledges the financial support from the Hong Kong fellowship scheme. Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = jun,

doi = "10.3390/nano12132128",

language = "English",

volume = "12",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "13",

}

TY - JOUR

T1 - Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device

AU - Ho, Tsz Lung

AU - Ding, Keda

AU - Lyapunov, Nikolay

AU - Suen, Chun Hung

AU - Wong, Lok Wing

AU - Zhao, Jiong

AU - Yang, Ming

AU - Zhou, Xiaoyuan

AU - Dai, Jiyan

N1 - Funding Information: Funding: We acknowledge the support from Hong Kong GRF grant (No. 15301421), the Guangdong– Hong Kong–Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices (GDSTC No. 2019B121205001), and the Hong Kong Polytechnic University (Grant Nos. 1-ZVSQ, UAEZ). X. Zhou acknowledges financial support from the National Natural Science Foundation of China (NSFC) (grant nos. 11674040, 11904039) and the Fundamental Research Funds for the Central Universities (grant nos. 2018CDQYWL0048, 106112017CDJQJ308821, and 2018CDPTCG0001/26). N.L. also acknowledges the financial support from the Hong Kong fellowship scheme. Publisher Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2022/6

Y1 - 2022/6

N2 - Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO 3 (STO) heterojunction-based memory devices with silver (Ag) and copper (Cu) top electrodes. The SnSe/STO-based memory devices present bipolar resistive switching (RS) with two orders of magnitude on/off ratio, which is reliable and stable. Moreover, multilevel state switching is achieved in the devices by sweeping voltage with current compliance to SET the device from high resistance state (HRS) to low resistance state (LRS) and RESET from LRS to HRS by voltage pulses without compliance current. With Ag and Cu top electrodes, respectively, eight and six levels of resistance switching were demonstrated in the SnSe/SrTiO 3 heterostructures with a Pt bottom electrode. These results suggest that a SnSe/STO heterojunction-based memristor is promising for applications in neuromorphic computing as a synaptic device.

AB - Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO 3 (STO) heterojunction-based memory devices with silver (Ag) and copper (Cu) top electrodes. The SnSe/STO-based memory devices present bipolar resistive switching (RS) with two orders of magnitude on/off ratio, which is reliable and stable. Moreover, multilevel state switching is achieved in the devices by sweeping voltage with current compliance to SET the device from high resistance state (HRS) to low resistance state (LRS) and RESET from LRS to HRS by voltage pulses without compliance current. With Ag and Cu top electrodes, respectively, eight and six levels of resistance switching were demonstrated in the SnSe/SrTiO 3 heterostructures with a Pt bottom electrode. These results suggest that a SnSe/STO heterojunction-based memristor is promising for applications in neuromorphic computing as a synaptic device.

KW - RRAM

KW - SnSe

KW - SrTiO

KW - memristor

KW - perovskite

UR - http://www.scopus.com/inward/record.url?scp=85132288234&partnerID=8YFLogxK

U2 - 10.3390/nano12132128

DO - 10.3390/nano12132128

M3 - Journal article

SN - 2079-4991

VL - 12

JO - Nanomaterials

JF - Nanomaterials

IS - 13

M1 - 2128

ER -

Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device

Abstract

Keywords

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this