Multi-functional nano-electronics constructed using boron phosphide and silicon carbide nanoribbons

First-principles density functional theory and non-equilibrium Green function calculations provide theoretical support for the promising applications of multi-functional nano-electronics constructed using zigzag boron phosphide (BP) nanoribbons (zBPNRs) and silicon carbide nanoribbons (zSiCNRs). The results indicate that zBPNRs are non-magnetic direct bandgap semiconductors with bandgaps of ∼1 eV. Devices constructed using hybrid zSiC-BP-SiC nanoribbon structures are found to exhibit not only significant field-effect characteristics but also tunable negative differential resistance. Moreover, δ-and δ-shaped nano-structures composed of zBPNRs and zSiCNRs exhibit pronounced spin polarization properties at their edges, suggesting their potential use in spintronic applications. Interestingly, a transverse electric field can convert zBPNRs to non-magnetic indirect bandgap semiconductors, ferrimagnetic semiconductors or half-metals depending on the strength and direction of the field. This study may provide a new path for the exploration of nano-electronics.