Monte Carlo simulation of ferroelectric polarization switching

X. Chen, C. Li, Feng Yan, J. Zhu, Y. Wang

Research output: Journal article publicationConference articleAcademic researchpeer-review

1 Citation (Scopus)

Abstract

We present results obtained by using a kinetic Ising model of polarization switching in multi-gain ferroelectric thin films. The system considered is three-dimensional and is composed of N×N grains with each grain sized L1×L2×L3. The next-nearest interaction was considered and grain boundary condition was simulated by changing the intensity of interaction between two dipoles in different grains. The simulation of anti-parallel domain evolution and switching current under various electric fields were performed. The effects of boundary condition and system size on the switching were investigated. Defect in system playing a role of nucleation was also studied.
Original languageEnglish
JournalIntegrated Ferroelectrics
Volume32
Issue number1-4
Publication statusPublished - 1 Jan 2001
Externally publishedYes
Event12th International Symposium on Integrated Ferroelectrics - Aachen, Germany
Duration: 12 Mar 200015 Mar 2000

Keywords

  • Ferroelectric thin films
  • Monte Carlo
  • Nucleation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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