Abstract
We present results obtained by using a kinetic Ising model of polarization switching in multi-gain ferroelectric thin films. The system considered is three-dimensional and is composed of N×N grains with each grain sized L1×L2×L3. The next-nearest interaction was considered and grain boundary condition was simulated by changing the intensity of interaction between two dipoles in different grains. The simulation of anti-parallel domain evolution and switching current under various electric fields were performed. The effects of boundary condition and system size on the switching were investigated. Defect in system playing a role of nucleation was also studied.
| Original language | English |
|---|---|
| Journal | Integrated Ferroelectrics |
| Volume | 32 |
| Issue number | 1-4 |
| Publication status | Published - 1 Jan 2001 |
| Externally published | Yes |
| Event | 12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: 12 Mar 2000 → 15 Mar 2000 |
Keywords
- Ferroelectric thin films
- Monte Carlo
- Nucleation
ASJC Scopus subject areas
- Control and Systems Engineering
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering