Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices

Keyphrases

• Moisture Absorption 100%
• Gate Dielectric 100%
• Hygroscopic Properties 100%
• Ge MOS Devices 100%
• Electrical Properties 66%
• Interface Quality 66%
• Interfacial Properties 33%
• Kappa Coefficient 33%
• High Resistance 33%
• Gate Leakage Current 33%
• Interface State Density 33%
• Passivation Effect 33%
• TaON 33%
• Ge Substrate 33%
• Quality Gates 33%
• Wet Annealing 33%
• Element Interdiffusion 33%

Engineering

• Gate Dielectric 100%
• Moisture Absorption 100%
• Passivation 50%
• Ge Interface 50%
• Ge Substrate 50%
• Interdiffusion 50%
• Interface State 50%

Material Science

• Dielectric Material 100%
• Annealing 50%
• Interface Property 50%
• Film 50%
• Density 50%