Modulating the Electrical Transport in the Two-Dimensional Electron Gas at LaAlO3/SrTiO3 Heterostructures by Interfacial Flexoelectricity

Fan Zhang, Peng Lv, Yiteng Zhang, Shujin Huang, Chi Man Wong, Hei Man Yau, Xinxin Chen, Zheng Wen, Xiaoning Jiang, Changgan Zeng, Jiawang Hong, Ji Yan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

33 Citations (Scopus)


Thin film flexoelectricity is attracting more attention because of its enhanced effect and potential application in electronic devices. Here we find that a mechanical bending induced flexoelectricity significantly modulates the electrical transport properties of the interfacial two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 (LAO/STO) heterostructure. Under variant bending states, both the carrier density and mobility of the 2DEG are changed according to the flexoelectric polarization direction, showing an electric field effect modulation. By measuring the flexoelectric response of LAO, it is found that the effective flexoelectricity in the LAO thin film is enhanced by 3 orders compared to its bulk. These results broaden the horizon of study on the flexoelectricity effect in the hetero-oxide interface and more research on the oxide interfacial flexoelectricity may be stimulated.

Original languageEnglish
Article number257601
JournalPhysical Review Letters
Issue number25
Publication statusPublished - 26 Jun 2019

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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