Keyphrases
Antiferromagnetic
100%
Antiferromagnetic Spintronics
50%
Bias Modulation
25%
Bilayer Structure
25%
Coercivity
25%
Electric Field (E-field)
50%
Electrochemical Reactions
25%
Exchange Bias
25%
Exchange Bias Field
25%
Ferroelectric Copolymer
100%
Gate Dielectric
100%
High Density
25%
La0.7Sr0.3MnO3
25%
La1-xSrxMnO3
75%
Low Temperature
25%
Low Voltage
100%
Low-voltage Pulses
50%
Oxygen Vacancy
50%
Polarity Dependence
25%
Positive Pulse
25%
Positive-sequence Voltage
50%
Pulse Modulation
25%
Reaction Systems
25%
Temperature Resistance
25%
Ultrafast
25%
Voltage Polarity
25%
Voltage Pulse
50%
X-ray Photoelectron Spectra
25%
Physics
Coercivity
50%
Copolymer
100%
Dielectric Material
100%
Electric Field
100%
Exchange Bias
100%
Ferroelectric Material
100%
Oxygen Vacancy
100%
Photoelectron
50%
Pulse Modulation
50%
Spintronics
100%
Thin Films
50%
Material Science
Copolymer
100%
Density
50%
Dielectric Material
100%
Electrochemical Reaction
50%
Ferroelectric Material
100%
Oxygen Vacancy
100%
Thin Films
50%