Modulating Antiferromagnetic La0.35Sr0.65MnO3 via Low-Voltage Pulsing across a Ferroelectric Copolymer Gate Dielectric

Electric-field based modulation is a promising way for realizing ultrafast and high density antiferromagnetic spintronics. Here, we investigate low-voltage-pulse modulation of antiferromagnetic La1-xSrxMnO3 (x = 0.65) (AF-LSMO) thin films. Positive voltage pulses can increase the resistance at low temperatures, which is ascribed to the oxygen vacancies induced by positive voltage pulses. This effect is supported by x-ray photoelectron spectra (XPS) results. Using low-voltage pulses, we demonstrate exchange bias modulation in ferromagnetic La0.7Sr0.3MnO3 (FM-LSMO)/AF-LSMO bilayer structure. Both temperature-dependent resistance, exchange bias field and coercivity show voltage-polarity dependence. While positive pulses can induce significant changes in the AF-LSMO, negative pulsing has little impact and is consistent with oxygen vacancy related process observed in various electrochemical reaction systems. Our findings can find potential for exploring electric-field modification of antiferromagnetic spintronics.