Modulating Antiferromagnetic La0.35Sr0.65MnO3 via Low-Voltage Pulsing across a Ferroelectric Copolymer Gate Dielectric

Xu Wen Zhao; Hon Fai Wong; Yu Kuai Liu; Sheung Mei Ng; Jing Ming Liang; Ka Kin Lam; Wang Fai Cheng; Chee Leung Mak; Chi Wah Leung

doi:10.1109/TMAG.2021.3085364

Modulating Antiferromagnetic La0.35Sr0.65MnO3 via Low-Voltage Pulsing across a Ferroelectric Copolymer Gate Dielectric

Xu Wen Zhao, Hon Fai Wong, Yu Kuai Liu, Sheung Mei Ng, Jing Ming Liang, Ka Kin Lam, Wang Fai Cheng, Chee Leung Mak, Chi Wah Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

1 Citation (Scopus)

Abstract

Electric-field based modulation is a promising way for realizing ultrafast and high density antiferromagnetic spintronics. Here, we investigate low-voltage-pulse modulation of antiferromagnetic La1-xSrxMnO3 (x = 0.65) (AF-LSMO) thin films. Positive voltage pulses can increase the resistance at low temperatures, which is ascribed to the oxygen vacancies induced by positive voltage pulses. This effect is supported by x-ray photoelectron spectra (XPS) results. Using low-voltage pulses, we demonstrate exchange bias modulation in ferromagnetic La0.7Sr0.3MnO3 (FM-LSMO)/AF-LSMO bilayer structure. Both temperature-dependent resistance, exchange bias field and coercivity show voltage-polarity dependence. While positive pulses can induce significant changes in the AF-LSMO, negative pulsing has little impact and is consistent with oxygen vacancy related process observed in various electrochemical reaction systems. Our findings can find potential for exploring electric-field modification of antiferromagnetic spintronics.

Original language	English
Journal	IEEE Transactions on Magnetics
DOIs	https://doi.org/10.1109/TMAG.2021.3085364
Publication status	Accepted/In press - 2021

Keywords

AF-LSMO thin film
Antiferromagnetism
ferroelectric copolymer
Films
Low voltage
low-voltage pulses
Magnetic properties
Manganese
Modulation
Resistance
Temperature measurement

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/TMAG.2021.3085364

http://hdl.handle.net/10397/95710

Cite this

@article{fa067ae33a14496f9cf314eb96b19dcb,

title = "Modulating Antiferromagnetic La0.35Sr0.65MnO3 via Low-Voltage Pulsing across a Ferroelectric Copolymer Gate Dielectric",

abstract = "Electric-field based modulation is a promising way for realizing ultrafast and high density antiferromagnetic spintronics. Here, we investigate low-voltage-pulse modulation of antiferromagnetic La1-xSrxMnO3 (x = 0.65) (AF-LSMO) thin films. Positive voltage pulses can increase the resistance at low temperatures, which is ascribed to the oxygen vacancies induced by positive voltage pulses. This effect is supported by x-ray photoelectron spectra (XPS) results. Using low-voltage pulses, we demonstrate exchange bias modulation in ferromagnetic La0.7Sr0.3MnO3 (FM-LSMO)/AF-LSMO bilayer structure. Both temperature-dependent resistance, exchange bias field and coercivity show voltage-polarity dependence. While positive pulses can induce significant changes in the AF-LSMO, negative pulsing has little impact and is consistent with oxygen vacancy related process observed in various electrochemical reaction systems. Our findings can find potential for exploring electric-field modification of antiferromagnetic spintronics.",

keywords = "AF-LSMO thin film, Antiferromagnetism, ferroelectric copolymer, Films, Low voltage, low-voltage pulses, Magnetic properties, Manganese, Modulation, Resistance, Temperature measurement",

author = "Zhao, {Xu Wen} and Wong, {Hon Fai} and Liu, {Yu Kuai} and Ng, {Sheung Mei} and Liang, {Jing Ming} and Lam, {Ka Kin} and Cheng, {Wang Fai} and Mak, {Chee Leung} and Leung, {Chi Wah}",

note = "Publisher Copyright: IEEE",

year = "2021",

doi = "10.1109/TMAG.2021.3085364",

language = "English",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "IEEE",

}

TY - JOUR

T1 - Modulating Antiferromagnetic La0.35Sr0.65MnO3 via Low-Voltage Pulsing across a Ferroelectric Copolymer Gate Dielectric

AU - Zhao, Xu Wen

AU - Wong, Hon Fai

AU - Liu, Yu Kuai

AU - Ng, Sheung Mei

AU - Liang, Jing Ming

AU - Lam, Ka Kin

AU - Cheng, Wang Fai

AU - Mak, Chee Leung

AU - Leung, Chi Wah

N1 - Publisher Copyright: IEEE

PY - 2021

Y1 - 2021

N2 - Electric-field based modulation is a promising way for realizing ultrafast and high density antiferromagnetic spintronics. Here, we investigate low-voltage-pulse modulation of antiferromagnetic La1-xSrxMnO3 (x = 0.65) (AF-LSMO) thin films. Positive voltage pulses can increase the resistance at low temperatures, which is ascribed to the oxygen vacancies induced by positive voltage pulses. This effect is supported by x-ray photoelectron spectra (XPS) results. Using low-voltage pulses, we demonstrate exchange bias modulation in ferromagnetic La0.7Sr0.3MnO3 (FM-LSMO)/AF-LSMO bilayer structure. Both temperature-dependent resistance, exchange bias field and coercivity show voltage-polarity dependence. While positive pulses can induce significant changes in the AF-LSMO, negative pulsing has little impact and is consistent with oxygen vacancy related process observed in various electrochemical reaction systems. Our findings can find potential for exploring electric-field modification of antiferromagnetic spintronics.

AB - Electric-field based modulation is a promising way for realizing ultrafast and high density antiferromagnetic spintronics. Here, we investigate low-voltage-pulse modulation of antiferromagnetic La1-xSrxMnO3 (x = 0.65) (AF-LSMO) thin films. Positive voltage pulses can increase the resistance at low temperatures, which is ascribed to the oxygen vacancies induced by positive voltage pulses. This effect is supported by x-ray photoelectron spectra (XPS) results. Using low-voltage pulses, we demonstrate exchange bias modulation in ferromagnetic La0.7Sr0.3MnO3 (FM-LSMO)/AF-LSMO bilayer structure. Both temperature-dependent resistance, exchange bias field and coercivity show voltage-polarity dependence. While positive pulses can induce significant changes in the AF-LSMO, negative pulsing has little impact and is consistent with oxygen vacancy related process observed in various electrochemical reaction systems. Our findings can find potential for exploring electric-field modification of antiferromagnetic spintronics.

KW - AF-LSMO thin film

KW - Antiferromagnetism

KW - ferroelectric copolymer

KW - Films

KW - Low voltage

KW - low-voltage pulses

KW - Magnetic properties

KW - Manganese

KW - Modulation

KW - Resistance

KW - Temperature measurement

UR - http://www.scopus.com/inward/record.url?scp=85107352814&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2021.3085364

DO - 10.1109/TMAG.2021.3085364

M3 - Journal article

AN - SCOPUS:85107352814

SN - 0018-9464

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

ER -

Modulating Antiferromagnetic La0.35Sr0.65MnO3 via Low-Voltage Pulsing across a Ferroelectric Copolymer Gate Dielectric

Abstract

Keywords

ASJC Scopus subject areas

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