Modulating Antiferromagnetic La0.35Sr0.65MnO3 via Low-Voltage Pulsing across a Ferroelectric Copolymer Gate Dielectric

Xu Wen Zhao, Hon Fai Wong, Yu Kuai Liu, Sheung Mei Ng, Jing Ming Liang, Ka Kin Lam, Wang Fai Cheng, Chee Leung Mak, Chi Wah Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review


Electric-field based modulation is a promising way for realizing ultrafast and high density antiferromagnetic spintronics. Here, we investigate low-voltage-pulse modulation of antiferromagnetic La1-xSrxMnO3 (x = 0.65) (AF-LSMO) thin films. Positive voltage pulses can increase the resistance at low temperatures, which is ascribed to the oxygen vacancies induced by positive voltage pulses. This effect is supported by x-ray photoelectron spectra (XPS) results. Using low-voltage pulses, we demonstrate exchange bias modulation in ferromagnetic La0.7Sr0.3MnO3 (FM-LSMO)/AF-LSMO bilayer structure. Both temperature-dependent resistance, exchange bias field and coercivity show voltage-polarity dependence. While positive pulses can induce significant changes in the AF-LSMO, negative pulsing has little impact and is consistent with oxygen vacancy related process observed in various electrochemical reaction systems. Our findings can find potential for exploring electric-field modification of antiferromagnetic spintronics.

Original languageEnglish
JournalIEEE Transactions on Magnetics
Publication statusAccepted/In press - 2021


  • AF-LSMO thin film
  • Antiferromagnetism
  • ferroelectric copolymer
  • Films
  • Low voltage
  • low-voltage pulses
  • Magnetic properties
  • Manganese
  • Modulation
  • Resistance
  • Temperature measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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