Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier

Yee Fun Lim, Kumar Priyadarshi, Fabio Bussolotti, Pranjal Kumar Gogoi, Xiaoyang Cui, Ming Yang, Jisheng Pan, Shi Wun Tong, Shijie Wang, Stephen J. Pennycook, Kuan Eng Johnson Goh, Andrew T.S. Wee, Swee Liang Wong, Dongzhi Chi

Research output: Journal article publicationJournal articleAcademic researchpeer-review

71 Citations (Scopus)


Single-layer molybdenum disulfide (MoS2) has attracted significant attention due to its electronic and physical properties, with much effort invested toward obtaining large-area high-quality monolayer MoS2 films. In this work, we demonstrate a reactive-barrier-based approach to achieve growth of highly homogeneous single-layer MoS2 on sapphire by the use of a nickel oxide foam barrier during chemical vapor deposition. Due to the reactivity of the NiO barrier with MoO3, the concentration of precursors reaching the substrate and thus nucleation density is effectively reduced, allowing grain sizes of up to 170 μm and continuous monolayers on the centimeter length scale being obtained. The quality of the monolayer is further revealed by angle-resolved photoemission spectroscopy measurement by observation of a very well resolved electronic band structure and spin-orbit splitting of the bands at room temperature with only two major domain orientations, indicating the successful growth of a highly crystalline and well-oriented MoS2 monolayer.

Original languageEnglish
Pages (from-to)1339-1349
Number of pages11
JournalACS Nano
Issue number2
Publication statusPublished - 27 Feb 2018


  • angle-resolved photoemission spectroscopy
  • chemical vapor deposition
  • electronic transport measurement
  • molybdenum disulfide
  • Raman spectroscopy

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier'. Together they form a unique fingerprint.

Cite this