TY - JOUR
T1 - Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier
AU - Lim, Yee Fun
AU - Priyadarshi, Kumar
AU - Bussolotti, Fabio
AU - Gogoi, Pranjal Kumar
AU - Cui, Xiaoyang
AU - Yang, Ming
AU - Pan, Jisheng
AU - Tong, Shi Wun
AU - Wang, Shijie
AU - Pennycook, Stephen J.
AU - Goh, Kuan Eng Johnson
AU - Wee, Andrew T.S.
AU - Wong, Swee Liang
AU - Chi, Dongzhi
N1 - Funding Information:
This research is supported by ASTAR Science and Engineering Research Council Pharos 2D Program (SERC Grant No. 152-70-00012). The authors would like to acknowledge the Singapore Synchrotron Light Source (SSLS) for the use of their STEM measurement facility. The laboratory is a National Research Infrastructure under the National Research Foundation Singapore. The authors would also like to thank V.S.F. Lim for his assistance in the device fabrication. S.J.P. and A.T.S.W. are grateful to NUS for support. Y.L., S.L.W., K.P., B.F. M.Y., X.C., K.E.J.G., and D.C. gratefully acknowledge support from the Institute of Materials Research and Engineering (IMRE) under the Agency for Science, Technology, and Research (ASTAR).
Funding Information:
†Institute of Materials Research and Engineering, Agency for Science Technology and Research, 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634 ‡Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 §Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pashan Pune 411008, India ∥Department of Materials Science & Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575
Funding Information:
This research is supported by A*STAR Science and Engineering Research Council Pharos 2D Program (SERC Grant No. 152-70-00012). The authors would like to acknowledge the Singapore Synchrotron Light Source (SSLS) for the use of their STEM measurement facility. The laboratory is a National Research Infrastructure under the National Research Foundation Singapore. The authors would also like to thank V.S.F. Lim for his assistance in the device fabrication. S.J.P. and A.T.S.W. are grateful to NUS for support. Y.L., S.L.W., K.P., B.F., M.Y., X.C., K.E.J.G., and D.C. gratefully acknowledge support from the Institute of Materials Research and Engineering (IMRE) under the Agency for Science, Technology, and Research (A*STAR).
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/2/27
Y1 - 2018/2/27
N2 - Single-layer molybdenum disulfide (MoS2) has attracted significant attention due to its electronic and physical properties, with much effort invested toward obtaining large-area high-quality monolayer MoS2 films. In this work, we demonstrate a reactive-barrier-based approach to achieve growth of highly homogeneous single-layer MoS2 on sapphire by the use of a nickel oxide foam barrier during chemical vapor deposition. Due to the reactivity of the NiO barrier with MoO3, the concentration of precursors reaching the substrate and thus nucleation density is effectively reduced, allowing grain sizes of up to 170 μm and continuous monolayers on the centimeter length scale being obtained. The quality of the monolayer is further revealed by angle-resolved photoemission spectroscopy measurement by observation of a very well resolved electronic band structure and spin-orbit splitting of the bands at room temperature with only two major domain orientations, indicating the successful growth of a highly crystalline and well-oriented MoS2 monolayer.
AB - Single-layer molybdenum disulfide (MoS2) has attracted significant attention due to its electronic and physical properties, with much effort invested toward obtaining large-area high-quality monolayer MoS2 films. In this work, we demonstrate a reactive-barrier-based approach to achieve growth of highly homogeneous single-layer MoS2 on sapphire by the use of a nickel oxide foam barrier during chemical vapor deposition. Due to the reactivity of the NiO barrier with MoO3, the concentration of precursors reaching the substrate and thus nucleation density is effectively reduced, allowing grain sizes of up to 170 μm and continuous monolayers on the centimeter length scale being obtained. The quality of the monolayer is further revealed by angle-resolved photoemission spectroscopy measurement by observation of a very well resolved electronic band structure and spin-orbit splitting of the bands at room temperature with only two major domain orientations, indicating the successful growth of a highly crystalline and well-oriented MoS2 monolayer.
KW - angle-resolved photoemission spectroscopy
KW - chemical vapor deposition
KW - electronic transport measurement
KW - molybdenum disulfide
KW - Raman spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=85042709820&partnerID=8YFLogxK
U2 - 10.1021/acsnano.7b07682
DO - 10.1021/acsnano.7b07682
M3 - Journal article
C2 - 29338197
AN - SCOPUS:85042709820
SN - 1936-0851
VL - 12
SP - 1339
EP - 1349
JO - ACS Nano
JF - ACS Nano
IS - 2
ER -