Abstract
This paper presents a detailed three-dimensional analysis for the modelling of the photoreflectance effect, in particular the response of layered samples is considered. The dependence of the photoreflectance signal on various parameters such as lifetime, surface recombination velocity and carrier diffusion coefficient is discussed. It is shown that the carrier diffusion coefficient and the thermal diffusivity play an important role in determining the signal level from the photoreflectance system. The effects of the wavelength of the pump and probe beams are also discussed. Furthermore, a fast numerical algorithm, allowing for a rapid computational evaluation, has been applied.
Original language | English |
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Article number | 026 |
Pages (from-to) | 1639-1647 |
Number of pages | 9 |
Journal | Semiconductor Science and Technology |
Volume | 8 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1 Dec 1993 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry