Modeling the etching rate and uniformity of plasma-aided manufacturing using statistical experimental design

Kam Chuen Yung, J. Wang, S. Q. Huang, C. P. Lee, Tai Man Yue

Research output: Journal article publicationJournal articleAcademic researchpeer-review

20 Citations (Scopus)


The response characteristics of an O2/ CF4-based plasma process used to desmear and etch back multi-layer rigid-flex printed circuit board were examined using a two-level fractional factorial experimental design. The effects of variation in RF power, temperature, gas proportion and gas flow (CF4and O2) on several output variables, including etch rate, process uniformity and selectivity were investigated. The screening factorial experiment was designed to isolate the most significant input parameters. In the experiments conducted, increases in the etching rate generally corresponded to decreases in uniformity. Etch uniformity was strongly dependent on temperature and gas proportion. The relative significance of polymer deposition and ion bombardment was separated. Using this information as a platform from which to proceed, the subsequent phase of the experiment developed empirical models of etch behavior using response surface 3-D plots. The models were subsequently used to optimize the etching process.
Original languageEnglish
Pages (from-to)899-906
Number of pages8
JournalMaterials and Manufacturing Processes
Issue number8
Publication statusPublished - 1 Dec 2006


  • Design of experiments
  • Etch rate
  • Plasma
  • Uniformity

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Industrial and Manufacturing Engineering

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