Modeling of diffused quantum well vertical cavity surface emitting lasers

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A comprehensive numerical model for investigating the thermal, electrical and optical characteristics of vertical cavity surface emitting lasers with a diffused quantum wells structure is presented. In general, this model performs a self-consistent calculation of quasi 3D distribution of temperature, voltage and optical field. The quasi 2D diffusion and the recombination of carrier concentration inside the quantum well active layer are also introduced into the model. In particular, this model includes the calculation of the quasi 3D ion-implantation profile. In addition, the influence of impurity induced compositional disordering on the optical gain and refractive index of the quantum wells active layer is also taken into consideration. Using this model, the steady state characteristics of diffused quantum wells vertical cavity surface emitting lasers are studied theoretically. It is shown that significant improvement of stable single-mode operation can be obtained using diffused quantum wells structure.
Original languageEnglish
Pages (from-to)841-848
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1 Dec 1998
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States
Duration: 26 Jan 199826 Jan 1998


  • Interdiffusion
  • Laser modeling
  • Quantum well semiconductor lasers
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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