Model-based Parameter Tuning of Semiconductor Devices in DC Power Cycling Test

Power cycling test serves as a widely employed accelerated test for semiconductor package reliability analysis, and has received considerable research attention in this area in the last few decades. Before the test is run formally, how to set test parameters to efficiently achieve the desired thermal stress is a crucial yet underreported aspect. The several attempts may be feasible but invariably result in a time-consuming process. To address this issue, this paper presents an approach based on the established thermal model, which quantifies the required thermal stresses, junction temperature fluctuation (∆T_j), and maximum junction temperature (T_jmax). Moreover, the adjustable parameters affecting two key thermal indicators are revealed. Then a flowchart for the parameter tuning is proposed. In addition, the model also can provide the thermal stress range of the tested module within the constraints of these adjustable parameters, which offers a valuable reference for implementing various testing conditions. Finally, the effectiveness of the method is validated through the experimental case study.