Microstructure, electrical properties of CeO2-doped (K0.5Na0.5)NbO3lead-free piezoelectric ceramics

Daojiang Gao, Kin Wing Kwok, Dunmin Lin, H. L.W. Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

49 Citations (Scopus)

Abstract

CeO2-doped K0.5Na0.5NbO3lead-free piezoelectric ceramics have been fabricated by a conventional ceramic fabrication technique. The ceramics retain the orthorhombic perovskite structure at low doping levels (<1 mol.%). Our results also demonstrate that the Ce-doping can suppress the grain growth, promote the densification, decrease the ferroelectric-paraelectric phase transition temperature (TC), and improve the dielectric and piezoelectric properties. For the ceramic doped with 0.75 mol.% CeO2, the dielectric and piezoelectric properties become optimum: piezoelectric coefficient d33= 130 pC/N, planar electromechanical coupling coefficient kp= 0.38, relative permittivity εr= 820, and loss tangent tanδ = 3%.
Original languageEnglish
Pages (from-to)2466-2470
Number of pages5
JournalJournal of Materials Science
Volume44
Issue number10
DOIs
Publication statusPublished - 1 May 2009

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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