Microstructure defects mediated charge transport in Nb-doped epitaxial BaTiO3thin films

Jian Zhou, Xiaosai Jing, Marin Alexe, Jiyan Dai, Minghui Qin, Sujuan Wu, Min Zeng, Jinwei Gao, Xubing Lu, J. M. Liu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)


Nb-doped BaTiO3(BNTO) films were deposited on MgO substrates at different substrate temperatures by pulsed laser deposition. The temperature dependence of their resistivity, carrier mobility and carrier concentration were systematically investigated. It reveals that the BNTO films deposited at lower temperature show higher resistivity and lower carrier mobility, and only show semiconductor characteristics at measurement temperatures ranging from 10 to 400 K. There is a metal-semiconductor transition at about 20 K for the films grown at relatively higher temperature. The intrinsic mechanism responsible for the different charge transport behavior was revealed by microstructure studies. Low crystal quality and high density of microstructure defects, observed for BNTO films grown at low temperatures, are, in particular, massively affecting the charge transport behavior of the BNTO films. The mediated charge transport of the microstructure defects is dominated by the thermal excitation process.
Original languageEnglish
Article number175302
JournalJournal of Physics D: Applied Physics
Issue number17
Publication statusPublished - 29 Mar 2016


  • BaTiO 3
  • carrier mobility
  • charge transport
  • conductivity
  • microstructure defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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