Microstructure and misfit relaxation in SrTiO3/SrRuO3bilayer films on LaAlO3(100) substrates

J. S. Wu; C. L. Jia; K. Urban; Jianhua Hao; X. X. Xi

doi:10.1557/JMR.2001.0473

Microstructure and misfit relaxation in SrTiO₃/SrRuO₃bilayer films on LaAlO₃(100) substrates

J. S. Wu, C. L. Jia, K. Urban, Jianhua Hao, X. X. Xi

Research output: Journal article publication › Journal article › Academic research › peer-review

38 Citations (Scopus)

Abstract

We studied the microstructure of SrTiO3/SrRuO3bilayer films on (001) LaAlO3substrates by high-resolution transmission electron microscopy. At the SrRuO3/LaAlO3interface a defect configuration of stacking faults and nanotwins bounding either Frank partial dislocations or Shockley partial dislocations and complex interaction between these planar defects were found to be the dominant means of misfit accommodation. The misfit in the SrTiO3/SrRuO3system, however, is mainly accommodated by elastic strain. Most of the observed defects in the SrTiO3layer can be related to the (111) planar defects in the SrRuO3layer propagating and reaching the SrTiO3/SrRuO3interface. Furthermore, a (110) planar defect can also be introduced in the SrTiO3layer due to the structure change of the SrTiO3/SrRuO3interface.

Original language	English
Pages (from-to)	3443-3450
Number of pages	8
Journal	Journal of Materials Research
Volume	16
Issue number	12
DOIs	https://doi.org/10.1557/JMR.2001.0473
Publication status	Published - 1 Jan 2001
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.2001.0473

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abstract = "We studied the microstructure of SrTiO3/SrRuO3bilayer films on (001) LaAlO3substrates by high-resolution transmission electron microscopy. At the SrRuO3/LaAlO3interface a defect configuration of stacking faults and nanotwins bounding either Frank partial dislocations or Shockley partial dislocations and complex interaction between these planar defects were found to be the dominant means of misfit accommodation. The misfit in the SrTiO3/SrRuO3system, however, is mainly accommodated by elastic strain. Most of the observed defects in the SrTiO3layer can be related to the (111) planar defects in the SrRuO3layer propagating and reaching the SrTiO3/SrRuO3interface. Furthermore, a (110) planar defect can also be introduced in the SrTiO3layer due to the structure change of the SrTiO3/SrRuO3interface.",

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AU - Wu, J. S.

AU - Jia, C. L.

AU - Urban, K.

AU - Hao, Jianhua

AU - Xi, X. X.

PY - 2001/1/1

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N2 - We studied the microstructure of SrTiO3/SrRuO3bilayer films on (001) LaAlO3substrates by high-resolution transmission electron microscopy. At the SrRuO3/LaAlO3interface a defect configuration of stacking faults and nanotwins bounding either Frank partial dislocations or Shockley partial dislocations and complex interaction between these planar defects were found to be the dominant means of misfit accommodation. The misfit in the SrTiO3/SrRuO3system, however, is mainly accommodated by elastic strain. Most of the observed defects in the SrTiO3layer can be related to the (111) planar defects in the SrRuO3layer propagating and reaching the SrTiO3/SrRuO3interface. Furthermore, a (110) planar defect can also be introduced in the SrTiO3layer due to the structure change of the SrTiO3/SrRuO3interface.

AB - We studied the microstructure of SrTiO3/SrRuO3bilayer films on (001) LaAlO3substrates by high-resolution transmission electron microscopy. At the SrRuO3/LaAlO3interface a defect configuration of stacking faults and nanotwins bounding either Frank partial dislocations or Shockley partial dislocations and complex interaction between these planar defects were found to be the dominant means of misfit accommodation. The misfit in the SrTiO3/SrRuO3system, however, is mainly accommodated by elastic strain. Most of the observed defects in the SrTiO3layer can be related to the (111) planar defects in the SrRuO3layer propagating and reaching the SrTiO3/SrRuO3interface. Furthermore, a (110) planar defect can also be introduced in the SrTiO3layer due to the structure change of the SrTiO3/SrRuO3interface.

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Microstructure and misfit relaxation in SrTiO₃/SrRuO₃bilayer films on LaAlO₃(100) substrates

Abstract

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