Microstrip lateral RF MEMS switch integrated with multistep CPW transition

A. Q. Liu; W. Palei; M. Tang; A. Alphones

doi:10.1002/mop.20557

Microstrip lateral RF MEMS switch integrated with multistep CPW transition

A. Q. Liu, W. Palei, M. Tang, A. Alphones

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

A new type of microstrip lateral metal-contacting micro-electromechanical systems (MEMS) series switch using an enhanced transition-design technology is proposed and demonstrated. It uses a conductor-backed coplanar waveguide (CBCPW) connected to a microstrip back-to-back MEMS transmission line without any via holes or bonded wires. The RF measurements of this switch show an off-state isolation of 18 dB and an on-state insertion loss of less than 2 dB at 6-27 CHz. In addition, the simplicity of this fabrication process is achieved using deep reactive-ion etching (DRIE), micromachining technology, and silicon-on-insulator (SOI) substrate.

Original language	English
Pages (from-to)	93-95
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	44
Issue number	1
DOIs	https://doi.org/10.1002/mop.20557
Publication status	Published - 5 Jan 2005
Externally published	Yes

Keywords

CPW
Microstrip
RF MEMS
SOI
Switch
Transition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

More information

10.1002/mop.20557

Cite this

@article{3b07d95e3164473da8fcd59209f53396,

title = "Microstrip lateral RF MEMS switch integrated with multistep CPW transition",

abstract = "A new type of microstrip lateral metal-contacting micro-electromechanical systems (MEMS) series switch using an enhanced transition-design technology is proposed and demonstrated. It uses a conductor-backed coplanar waveguide (CBCPW) connected to a microstrip back-to-back MEMS transmission line without any via holes or bonded wires. The RF measurements of this switch show an off-state isolation of 18 dB and an on-state insertion loss of less than 2 dB at 6-27 CHz. In addition, the simplicity of this fabrication process is achieved using deep reactive-ion etching (DRIE), micromachining technology, and silicon-on-insulator (SOI) substrate.",

keywords = "CPW, Microstrip, RF MEMS, SOI, Switch, Transition",

author = "Liu, {A. Q.} and W. Palei and M. Tang and A. Alphones",

year = "2005",

month = jan,

day = "5",

doi = "10.1002/mop.20557",

language = "English",

volume = "44",

pages = "93--95",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley & Sons Inc.",

number = "1",

}

TY - JOUR

T1 - Microstrip lateral RF MEMS switch integrated with multistep CPW transition

AU - Liu, A. Q.

AU - Palei, W.

AU - Tang, M.

AU - Alphones, A.

PY - 2005/1/5

Y1 - 2005/1/5

N2 - A new type of microstrip lateral metal-contacting micro-electromechanical systems (MEMS) series switch using an enhanced transition-design technology is proposed and demonstrated. It uses a conductor-backed coplanar waveguide (CBCPW) connected to a microstrip back-to-back MEMS transmission line without any via holes or bonded wires. The RF measurements of this switch show an off-state isolation of 18 dB and an on-state insertion loss of less than 2 dB at 6-27 CHz. In addition, the simplicity of this fabrication process is achieved using deep reactive-ion etching (DRIE), micromachining technology, and silicon-on-insulator (SOI) substrate.

AB - A new type of microstrip lateral metal-contacting micro-electromechanical systems (MEMS) series switch using an enhanced transition-design technology is proposed and demonstrated. It uses a conductor-backed coplanar waveguide (CBCPW) connected to a microstrip back-to-back MEMS transmission line without any via holes or bonded wires. The RF measurements of this switch show an off-state isolation of 18 dB and an on-state insertion loss of less than 2 dB at 6-27 CHz. In addition, the simplicity of this fabrication process is achieved using deep reactive-ion etching (DRIE), micromachining technology, and silicon-on-insulator (SOI) substrate.

KW - CPW

KW - Microstrip

KW - RF MEMS

KW - SOI

KW - Switch

KW - Transition

UR - http://www.scopus.com/inward/record.url?scp=10944270153&partnerID=8YFLogxK

U2 - 10.1002/mop.20557

DO - 10.1002/mop.20557

M3 - Journal article

AN - SCOPUS:10944270153

SN - 0895-2477

VL - 44

SP - 93

EP - 95

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 1

ER -

Microstrip lateral RF MEMS switch integrated with multistep CPW transition

Abstract

Keywords

ASJC Scopus subject areas

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