Micro-pressure sensors made of indium tin oxide thin films

Kai Wah Yeung, Chung Wo Ong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

19 Citations (Scopus)


The microstructure, electrical resistivity and piezoresistive property of magnetron sputtered indium tin oxide (ITO) films were investigated as functions of preparation and post-annealing conditions. Annealing at 400 °C for 30 min resulted in low electrical resistivity ≤6.0 × 10-3Ω cm and observable piezoresistive coefficient ranging from -4.3 × 10-11to -7.1 × 10-11Pa-1. Prototypes of pressure sensors with an annealed ITO film deposited on a 25 μm thick silicon diaphragm were fabricated. With a bias voltage of 1 V, the device gave a voltage response of 12.6 mV when the differential pressure across the diaphragm varied from -6 × 104to 6 × 104Pa.
Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalSensors and Actuators, A: Physical
Issue number1
Publication statusPublished - 12 Jun 2007


  • Indium tin oxide
  • Magnetron sputtering
  • Piezoresistive property
  • Pressure sensors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation


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