Micro-pressure sensors made of indium tin oxide thin films

Kai Wah Yeung; Chung Wo Ong

doi:10.1016/j.sna.2007.01.012

Micro-pressure sensors made of indium tin oxide thin films

Kai Wah Yeung, Chung Wo Ong

Research output: Journal article publication › Journal article › Academic research › peer-review

19 Citations (Scopus)

Abstract

The microstructure, electrical resistivity and piezoresistive property of magnetron sputtered indium tin oxide (ITO) films were investigated as functions of preparation and post-annealing conditions. Annealing at 400 °C for 30 min resulted in low electrical resistivity ≤6.0 × 10-3Ω cm and observable piezoresistive coefficient ranging from -4.3 × 10-11to -7.1 × 10-11Pa-1. Prototypes of pressure sensors with an annealed ITO film deposited on a 25 μm thick silicon diaphragm were fabricated. With a bias voltage of 1 V, the device gave a voltage response of 12.6 mV when the differential pressure across the diaphragm varied from -6 × 104to 6 × 104Pa.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	137
Issue number	1
DOIs	https://doi.org/10.1016/j.sna.2007.01.012
Publication status	Published - 12 Jun 2007

Keywords

Indium tin oxide
Magnetron sputtering
Piezoresistive property
Pressure sensors

ASJC Scopus subject areas

Electrical and Electronic Engineering
Mechanical Engineering
Instrumentation

More information

10.1016/j.sna.2007.01.012

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AU - Ong, Chung Wo

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AB - The microstructure, electrical resistivity and piezoresistive property of magnetron sputtered indium tin oxide (ITO) films were investigated as functions of preparation and post-annealing conditions. Annealing at 400 °C for 30 min resulted in low electrical resistivity ≤6.0 × 10-3Ω cm and observable piezoresistive coefficient ranging from -4.3 × 10-11to -7.1 × 10-11Pa-1. Prototypes of pressure sensors with an annealed ITO film deposited on a 25 μm thick silicon diaphragm were fabricated. With a bias voltage of 1 V, the device gave a voltage response of 12.6 mV when the differential pressure across the diaphragm varied from -6 × 104to 6 × 104Pa.

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KW - Magnetron sputtering

KW - Piezoresistive property

KW - Pressure sensors

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Micro-pressure sensors made of indium tin oxide thin films

Abstract

Keywords

ASJC Scopus subject areas

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