MgTiO3doping effect on dielectric properties of Ba0.6Sr0.4TiO3ceramics via a molten salt process

Shanming Ke; Huiqing Fan; Wei Wang; Gangcheng Jiao; Haitao Huang; H. L.W. Chan

doi:10.1016/j.compositesa.2007.08.013

MgTiO₃doping effect on dielectric properties of Ba_0.6Sr_0.4TiO₃ceramics via a molten salt process

Shanming Ke
, Huiqing Fan
, Wei Wang
, Gangcheng Jiao
, Haitao Huang
, H. L.W. Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

14 Citations (Scopus)

Abstract

Ba0.6Sr0.4TiO3-MgTiO3composites were prepared by reaction of BST powders with molten MgCl2at various MgCl2/BST molar ratios at 600 and 800 °C in air. The products were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is shown that the ceramic composites have a relaxor-like ferroelectric transition as MgTiO3is above 8 mol%. The addition of MgTiO3has greatly reduced the dielectric loss of BST ceramics. The BST-MT ceramics could be a promising candidate for tunable microwave device applications.

Original language	English
Pages (from-to)	597-601
Number of pages	5
Journal	Composites Part A: Applied Science and Manufacturing
Volume	39
Issue number	4
DOIs	https://doi.org/10.1016/j.compositesa.2007.08.013
Publication status	Published - 1 Apr 2008

Keywords

A. Ceramic-matrix composites (CMCs)
A. Smart materials
B. Electrical properties
E. Powder processing

ASJC Scopus subject areas

Ceramics and Composites
Mechanics of Materials

More information

10.1016/j.compositesa.2007.08.013

Cite this

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title = "MgTiO3doping effect on dielectric properties of Ba0.6Sr0.4TiO3ceramics via a molten salt process",

abstract = "Ba0.6Sr0.4TiO3-MgTiO3composites were prepared by reaction of BST powders with molten MgCl2at various MgCl2/BST molar ratios at 600 and 800 °C in air. The products were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is shown that the ceramic composites have a relaxor-like ferroelectric transition as MgTiO3is above 8 mol\%. The addition of MgTiO3has greatly reduced the dielectric loss of BST ceramics. The BST-MT ceramics could be a promising candidate for tunable microwave device applications.",

keywords = "A. Ceramic-matrix composites (CMCs), A. Smart materials, B. Electrical properties, E. Powder processing",

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T1 - MgTiO3doping effect on dielectric properties of Ba0.6Sr0.4TiO3ceramics via a molten salt process

AU - Ke, Shanming

AU - Fan, Huiqing

AU - Wang, Wei

AU - Jiao, Gangcheng

AU - Huang, Haitao

AU - Chan, H. L.W.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - Ba0.6Sr0.4TiO3-MgTiO3composites were prepared by reaction of BST powders with molten MgCl2at various MgCl2/BST molar ratios at 600 and 800 °C in air. The products were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is shown that the ceramic composites have a relaxor-like ferroelectric transition as MgTiO3is above 8 mol%. The addition of MgTiO3has greatly reduced the dielectric loss of BST ceramics. The BST-MT ceramics could be a promising candidate for tunable microwave device applications.

AB - Ba0.6Sr0.4TiO3-MgTiO3composites were prepared by reaction of BST powders with molten MgCl2at various MgCl2/BST molar ratios at 600 and 800 °C in air. The products were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is shown that the ceramic composites have a relaxor-like ferroelectric transition as MgTiO3is above 8 mol%. The addition of MgTiO3has greatly reduced the dielectric loss of BST ceramics. The BST-MT ceramics could be a promising candidate for tunable microwave device applications.

KW - A. Ceramic-matrix composites (CMCs)

KW - A. Smart materials

KW - B. Electrical properties

KW - E. Powder processing

UR - https://www.scopus.com/pages/publications/40749135791

U2 - 10.1016/j.compositesa.2007.08.013

DO - 10.1016/j.compositesa.2007.08.013

M3 - Journal article

SN - 1359-835X

VL - 39

SP - 597

EP - 601

JO - Composites Part A: Applied Science and Manufacturing

JF - Composites Part A: Applied Science and Manufacturing

IS - 4

ER -