Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

A. Wang; S. C. Cheng; J. A. Belot; R. J. McNeely; J. Cheng; B. Marcordes; T. J. Marks; Jiyan Dai; R. P.H. Chang; J. L. Schindler; M. P. Chudzik; C. R. Kannewurf

Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

A. Wang
, S. C. Cheng
, J. A. Belot
, R. J. McNeely
, J. Cheng
, B. Marcordes
, T. J. Marks
, Jiyan Dai
, R. P.H. Chang
, J. L. Schindler
, M. P. Chudzik
, C. R. Kannewurf

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3and ZnkIn2Ok+3films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2(dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

Original language	English
Pages (from-to)	3-10
Number of pages	8
Journal	Materials Research Society Symposium - Proceedings
Volume	495
Publication status	Published - 1 Jan 1998
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, United States Duration: 30 Nov 1997 → 4 Dec 1997

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{ec5b0686dc85486aaa2c9b34b250aa6d,

title = "Metal-organic chemical vapor deposition routes to films of transparent conducting oxides",

abstract = "This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3and ZnkIn2Ok+3films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2(dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.",

author = "A. Wang and Cheng, \{S. C.\} and Belot, \{J. A.\} and McNeely, \{R. J.\} and J. Cheng and B. Marcordes and Marks, \{T. J.\} and Jiyan Dai and Chang, \{R. P.H.\} and Schindler, \{J. L.\} and Chudzik, \{M. P.\} and Kannewurf, \{C. R.\}",

year = "1998",

month = jan,

day = "1",

language = "English",

volume = "495",

pages = "3--10",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 30-11-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

AU - Wang, A.

AU - Cheng, S. C.

AU - Belot, J. A.

AU - McNeely, R. J.

AU - Cheng, J.

AU - Marcordes, B.

AU - Marks, T. J.

AU - Dai, Jiyan

AU - Chang, R. P.H.

AU - Schindler, J. L.

AU - Chudzik, M. P.

AU - Kannewurf, C. R.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3and ZnkIn2Ok+3films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2(dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

AB - This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3and ZnkIn2Ok+3films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2(dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25 °C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2×1020cm-3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range k = 0.16 - 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25 °C) as high as 1000 S/cm (n-type; carrier density = 3.7×1020cm-3, mobility = 18.6 cm2/Vs) for k = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.

UR - https://www.scopus.com/pages/publications/0031631621

M3 - Conference article

SN - 0272-9172

VL - 495

SP - 3

EP - 10

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 30 November 1997 through 4 December 1997

ER -

Metal-organic chemical vapor deposition routes to films of transparent conducting oxides

Abstract

ASJC Scopus subject areas

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